Measurement and modelling of transport in amorphous semiconductors

C. Main, S. Reynolds

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Experimental transient photoconductivity in a-Si:H and mu c-Si: H is analysed by a Fourier Transform technique to reveal a relative density of states. It is often found that a deep-lying structure probably associated with defects, at around 0.5 - 0.6 eV depth exhibits an apparent shift against the background of band-tail states as the temperature is varied. We investigate by numerical modelling whether this shift arises from differential attempt-to-escape frequencies in a multi-trapping context, or from a temperature - dependent hopping transport energy.

    Original languageEnglish
    Title of host publication16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS
    EditorsD DimovaMalinovska, D Nesheva, AG Petrov, MT Primatarowa
    Place of PublicationBRISTOL
    PublisherIOP Publishing Ltd.
    Pages-
    Number of pages9
    ISBN (Print)*****************
    DOIs
    Publication statusPublished - 2010
    Event16th International School on Condensed Matter Physics Meeting - Varna, Bulgaria
    Duration: 29 Aug 20103 Sep 2010

    Conference

    Conference16th International School on Condensed Matter Physics Meeting
    Abbreviated title16 ISCMP
    CountryBulgaria
    CityVarna
    Period29/08/103/09/10

    Cite this

    Main, C., & Reynolds, S. (2010). Measurement and modelling of transport in amorphous semiconductors. In D. DimovaMalinovska, D. Nesheva, AG. Petrov, & MT. Primatarowa (Eds.), 16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS (pp. -). IOP Publishing Ltd.. https://doi.org/10.1088/1742-6596/253/1/012001