Measurement and modelling of transport in amorphous semiconductors

C. Main; S. Reynolds

doi:10.1088/1742-6596/253/1/012001

Measurement and modelling of transport in amorphous semiconductors

C. Main, S. Reynolds

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Experimental transient photoconductivity in a-Si:H and mu c-Si: H is analysed by a Fourier Transform technique to reveal a relative density of states. It is often found that a deep-lying structure probably associated with defects, at around 0.5 - 0.6 eV depth exhibits an apparent shift against the background of band-tail states as the temperature is varied. We investigate by numerical modelling whether this shift arises from differential attempt-to-escape frequencies in a multi-trapping context, or from a temperature - dependent hopping transport energy.

Original language	English
Title of host publication	16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS
Editors	D DimovaMalinovska, D Nesheva, AG Petrov, MT Primatarowa
Place of Publication	BRISTOL
Publisher	IOP Publishing Ltd.
Pages	-
Number of pages	9
ISBN (Print)	*****************
DOIs	https://doi.org/10.1088/1742-6596/253/1/012001
Publication status	Published - 2010
Event	16th International School on Condensed Matter Physics Meeting - Varna, Bulgaria Duration: 29 Aug 2010 → 3 Sept 2010

Conference

Conference	16th International School on Condensed Matter Physics Meeting
Abbreviated title	16 ISCMP
Country/Territory	Bulgaria
City	Varna
Period	29/08/10 → 3/09/10

Access to Document

10.1088/1742-6596/253/1/012001

Cite this

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title = "Measurement and modelling of transport in amorphous semiconductors",

abstract = "Experimental transient photoconductivity in a-Si:H and mu c-Si: H is analysed by a Fourier Transform technique to reveal a relative density of states. It is often found that a deep-lying structure probably associated with defects, at around 0.5 - 0.6 eV depth exhibits an apparent shift against the background of band-tail states as the temperature is varied. We investigate by numerical modelling whether this shift arises from differential attempt-to-escape frequencies in a multi-trapping context, or from a temperature - dependent hopping transport energy.",

author = "C. Main and S. Reynolds",

year = "2010",

doi = "10.1088/1742-6596/253/1/012001",

language = "English",

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editor = "D DimovaMalinovska and D Nesheva and AG Petrov and MT Primatarowa",

booktitle = "16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS",

publisher = "IOP Publishing Ltd.",

address = "United Kingdom",

note = "16th International School on Condensed Matter Physics Meeting, 16 ISCMP ; Conference date: 29-08-2010 Through 03-09-2010",

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Main, C & Reynolds, S 2010, Measurement and modelling of transport in amorphous semiconductors. in D DimovaMalinovska, D Nesheva, AG Petrov & MT Primatarowa (eds), 16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS. IOP Publishing Ltd., BRISTOL, pp. -, 16th International School on Condensed Matter Physics Meeting, Varna, Bulgaria, 29/08/10. https://doi.org/10.1088/1742-6596/253/1/012001

Measurement and modelling of transport in amorphous semiconductors. / Main, C.; Reynolds, S.
16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS. ed. / D DimovaMalinovska; D Nesheva; AG Petrov; MT Primatarowa. BRISTOL: IOP Publishing Ltd., 2010. p. -.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Measurement and modelling of transport in amorphous semiconductors

AU - Main, C.

AU - Reynolds, S.

PY - 2010

Y1 - 2010

N2 - Experimental transient photoconductivity in a-Si:H and mu c-Si: H is analysed by a Fourier Transform technique to reveal a relative density of states. It is often found that a deep-lying structure probably associated with defects, at around 0.5 - 0.6 eV depth exhibits an apparent shift against the background of band-tail states as the temperature is varied. We investigate by numerical modelling whether this shift arises from differential attempt-to-escape frequencies in a multi-trapping context, or from a temperature - dependent hopping transport energy.

AB - Experimental transient photoconductivity in a-Si:H and mu c-Si: H is analysed by a Fourier Transform technique to reveal a relative density of states. It is often found that a deep-lying structure probably associated with defects, at around 0.5 - 0.6 eV depth exhibits an apparent shift against the background of band-tail states as the temperature is varied. We investigate by numerical modelling whether this shift arises from differential attempt-to-escape frequencies in a multi-trapping context, or from a temperature - dependent hopping transport energy.

U2 - 10.1088/1742-6596/253/1/012001

DO - 10.1088/1742-6596/253/1/012001

M3 - Conference contribution

SN - *****************

SP - -

BT - 16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS

A2 - DimovaMalinovska, D

A2 - Nesheva, D

A2 - Petrov, AG

A2 - Primatarowa, MT

PB - IOP Publishing Ltd.

CY - BRISTOL

T2 - 16th International School on Condensed Matter Physics Meeting

Y2 - 29 August 2010 through 3 September 2010

ER -

Measurement and modelling of transport in amorphous semiconductors

Abstract

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