Measurements of nonlinear lensing in a semiconductor disk laser gain sample under optical pumping and using a resonant femtosecond probe laser

A. H. Quarterman (Lead / Corresponding author), S. Mirkhanov, C. J. C. Smyth, K. G. Wilcox

Research output: Contribution to journalArticle

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Abstract

Accurate characterizations of the nonlinear refractive index of semiconductor disk laser (SDL) gain samples are of critical importance for understanding the behavior of self-mode-locked SDLs. Here we describe measurements of nonlinear lensing in an SDL gain sample for a wide range of optical pump intensities and using a probe which is on resonance with the quantum wells in the SDL gain sample and whose intensity, pulse duration, and spot size are chosen to be similar to those reported in self-mode-locked SDLs. Under these conditions, we determine an effective value of the nonlinear refractive index, n2¼6.5 1013 cm2/W at zero pump intensity, and find that the value of n2 changes by less than 25% over the range of pump intensities studied. The nonlinear refractive index is measured using a variation on the well-established z-scan technique, which was modified to make
it better suited to the measurement of optically pumped samples.
Original languageEnglish
Article number121113
Number of pages4
JournalApplied Physics Letters
Volume109
Issue number12
DOIs
Publication statusPublished - 19 Sep 2016

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optical pumping
probes
refractivity
pumps
lasers
pulse duration
quantum wells

Keywords

  • Quantum wells
  • Semiconductors
  • Transmission measurement
  • Carrier density
  • Refractive index

Cite this

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title = "Measurements of nonlinear lensing in a semiconductor disk laser gain sample under optical pumping and using a resonant femtosecond probe laser",
abstract = "Accurate characterizations of the nonlinear refractive index of semiconductor disk laser (SDL) gain samples are of critical importance for understanding the behavior of self-mode-locked SDLs. Here we describe measurements of nonlinear lensing in an SDL gain sample for a wide range of optical pump intensities and using a probe which is on resonance with the quantum wells in the SDL gain sample and whose intensity, pulse duration, and spot size are chosen to be similar to those reported in self-mode-locked SDLs. Under these conditions, we determine an effective value of the nonlinear refractive index, n2¼6.5 1013 cm2/W at zero pump intensity, and find that the value of n2 changes by less than 25{\%} over the range of pump intensities studied. The nonlinear refractive index is measured using a variation on the well-established z-scan technique, which was modified to makeit better suited to the measurement of optically pumped samples.",
keywords = "Quantum wells, Semiconductors, Transmission measurement, Carrier density, Refractive index",
author = "Quarterman, {A. H.} and S. Mirkhanov and {J. C. Smyth}, C. and Wilcox, {K. G.}",
note = "Funding supporting this work was received from the UK Engineering and Physical Sciences Research Council (EPSRC), Grant No. EP/J017043/2.",
year = "2016",
month = "9",
day = "19",
doi = "10.1063/1.4963352",
language = "English",
volume = "109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
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Measurements of nonlinear lensing in a semiconductor disk laser gain sample under optical pumping and using a resonant femtosecond probe laser. / Quarterman, A. H. (Lead / Corresponding author); Mirkhanov, S.; J. C. Smyth, C.; Wilcox, K. G.

In: Applied Physics Letters, Vol. 109, No. 12, 121113, 19.09.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Measurements of nonlinear lensing in a semiconductor disk laser gain sample under optical pumping and using a resonant femtosecond probe laser

AU - Quarterman, A. H.

AU - Mirkhanov, S.

AU - J. C. Smyth, C.

AU - Wilcox, K. G.

N1 - Funding supporting this work was received from the UK Engineering and Physical Sciences Research Council (EPSRC), Grant No. EP/J017043/2.

PY - 2016/9/19

Y1 - 2016/9/19

N2 - Accurate characterizations of the nonlinear refractive index of semiconductor disk laser (SDL) gain samples are of critical importance for understanding the behavior of self-mode-locked SDLs. Here we describe measurements of nonlinear lensing in an SDL gain sample for a wide range of optical pump intensities and using a probe which is on resonance with the quantum wells in the SDL gain sample and whose intensity, pulse duration, and spot size are chosen to be similar to those reported in self-mode-locked SDLs. Under these conditions, we determine an effective value of the nonlinear refractive index, n2¼6.5 1013 cm2/W at zero pump intensity, and find that the value of n2 changes by less than 25% over the range of pump intensities studied. The nonlinear refractive index is measured using a variation on the well-established z-scan technique, which was modified to makeit better suited to the measurement of optically pumped samples.

AB - Accurate characterizations of the nonlinear refractive index of semiconductor disk laser (SDL) gain samples are of critical importance for understanding the behavior of self-mode-locked SDLs. Here we describe measurements of nonlinear lensing in an SDL gain sample for a wide range of optical pump intensities and using a probe which is on resonance with the quantum wells in the SDL gain sample and whose intensity, pulse duration, and spot size are chosen to be similar to those reported in self-mode-locked SDLs. Under these conditions, we determine an effective value of the nonlinear refractive index, n2¼6.5 1013 cm2/W at zero pump intensity, and find that the value of n2 changes by less than 25% over the range of pump intensities studied. The nonlinear refractive index is measured using a variation on the well-established z-scan technique, which was modified to makeit better suited to the measurement of optically pumped samples.

KW - Quantum wells

KW - Semiconductors

KW - Transmission measurement

KW - Carrier density

KW - Refractive index

U2 - 10.1063/1.4963352

DO - 10.1063/1.4963352

M3 - Article

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 121113

ER -