Methylsilane on Cu(1 1 1), a STM study of the (√3×√3) R30°-Cu2Si surface silicide

Hervé Ménard, Andrew B. Horn, Steven P. Tear

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Scanning tunnelling microscopy has been used to investigate the surface structure of the (3×3)R30°-Cu2Si surface silicide formed on Cu(1 1 1) after adsorption of methylsilane at 595 K. The STM images have shown the presence of a domain wall network on the surface, in the form of a 0.1 Å variation in height on the lateral scale of a minimum of 26 Å. The interpretation of the STM images has indicated that the areas between the domains walls are associated with silicon and copper atoms both residing in either fcc or hcp three-fold hollow sites, whilst the domain wall is a result of an abrupt change enhanced with some electronic contribution.

Original languageEnglish
Pages (from-to)47-52
Number of pages6
JournalSurface Science
Volume585
Issue number1-2
Early online date21 Apr 2005
DOIs
Publication statusPublished - 1 Jul 2005

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Domain walls
domain wall
Scanning tunneling microscopy
Silicon
Surface structure
scanning tunneling microscopy
Copper
hollow
Adsorption
copper
Atoms
adsorption
silicon
electronics
atoms

Keywords

  • Compound formation
  • Copper
  • Low index single crystal surfaces
  • Scanning tunnelling microscopy
  • Silicides
  • Surface structure, morphology, roughness, and topography

Cite this

Ménard, Hervé ; Horn, Andrew B. ; Tear, Steven P. / Methylsilane on Cu(1 1 1), a STM study of the (√3×√3) R30°-Cu2Si surface silicide. In: Surface Science. 2005 ; Vol. 585, No. 1-2. pp. 47-52.
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abstract = "Scanning tunnelling microscopy has been used to investigate the surface structure of the (3×3)R30°-Cu2Si surface silicide formed on Cu(1 1 1) after adsorption of methylsilane at 595 K. The STM images have shown the presence of a domain wall network on the surface, in the form of a 0.1 {\AA} variation in height on the lateral scale of a minimum of 26 {\AA}. The interpretation of the STM images has indicated that the areas between the domains walls are associated with silicon and copper atoms both residing in either fcc or hcp three-fold hollow sites, whilst the domain wall is a result of an abrupt change enhanced with some electronic contribution.",
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Methylsilane on Cu(1 1 1), a STM study of the (√3×√3) R30°-Cu2Si surface silicide. / Ménard, Hervé; Horn, Andrew B.; Tear, Steven P.

In: Surface Science, Vol. 585, No. 1-2, 01.07.2005, p. 47-52.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Methylsilane on Cu(1 1 1), a STM study of the (√3×√3) R30°-Cu2Si surface silicide

AU - Ménard, Hervé

AU - Horn, Andrew B.

AU - Tear, Steven P.

N1 - Copyright © 2005 Elsevier B.V. All rights reserved.

PY - 2005/7/1

Y1 - 2005/7/1

N2 - Scanning tunnelling microscopy has been used to investigate the surface structure of the (3×3)R30°-Cu2Si surface silicide formed on Cu(1 1 1) after adsorption of methylsilane at 595 K. The STM images have shown the presence of a domain wall network on the surface, in the form of a 0.1 Å variation in height on the lateral scale of a minimum of 26 Å. The interpretation of the STM images has indicated that the areas between the domains walls are associated with silicon and copper atoms both residing in either fcc or hcp three-fold hollow sites, whilst the domain wall is a result of an abrupt change enhanced with some electronic contribution.

AB - Scanning tunnelling microscopy has been used to investigate the surface structure of the (3×3)R30°-Cu2Si surface silicide formed on Cu(1 1 1) after adsorption of methylsilane at 595 K. The STM images have shown the presence of a domain wall network on the surface, in the form of a 0.1 Å variation in height on the lateral scale of a minimum of 26 Å. The interpretation of the STM images has indicated that the areas between the domains walls are associated with silicon and copper atoms both residing in either fcc or hcp three-fold hollow sites, whilst the domain wall is a result of an abrupt change enhanced with some electronic contribution.

KW - Compound formation

KW - Copper

KW - Low index single crystal surfaces

KW - Scanning tunnelling microscopy

KW - Silicides

KW - Surface structure, morphology, roughness, and topography

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DO - 10.1016/j.susc.2005.04.008

M3 - Article

VL - 585

SP - 47

EP - 52

JO - Surface Science

JF - Surface Science

SN - 1879-2758

IS - 1-2

ER -