Modelling thermally-stimulated currents in disordered semiconductors

Charles Main

    Research output: Contribution to journalArticle

    Abstract

    We report a computer modelling study of thermally stimulated currents in thin film semiconductors. In a multi trapping context, we examine this method as a 'spectroscopy' of the energy distribution of localised states. We consider so-called 'weak' and 'strong' re-trapping conditions, the use of non-physical 'effective' attempt-to-escape frequencies and the effect of lifetime variation as distributions relax. We show that for strong, re-trapping in distributed states, the energy scale can be better approximated by the quasi-Fermi level position and propose that the density of states may alternatively be computed using the easily determined derivative of the quasi-Fermi energy with respect to temperature. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    Original languageEnglish
    Pages (from-to)1845-1848
    Number of pages4
    JournalPhysica Status Solidi B: Basic Solid State Physics
    Volume246
    Issue number8
    DOIs
    Publication statusPublished - Aug 2009

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