Abstract
We report a computer modelling study of thermally stimulated currents in thin film semiconductors. In a multi trapping context, we examine this method as a 'spectroscopy' of the energy distribution of localised states. We consider so-called 'weak' and 'strong' re-trapping conditions, the use of non-physical 'effective' attempt-to-escape frequencies and the effect of lifetime variation as distributions relax. We show that for strong, re-trapping in distributed states, the energy scale can be better approximated by the quasi-Fermi level position and propose that the density of states may alternatively be computed using the easily determined derivative of the quasi-Fermi energy with respect to temperature. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Original language | English |
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Pages (from-to) | 1845-1848 |
Number of pages | 4 |
Journal | Physica Status Solidi B: Basic Solid State Physics |
Volume | 246 |
Issue number | 8 |
DOIs | |
Publication status | Published - Aug 2009 |