Abstract
Modulated photocurrent phase shift measurements (MPC) have been used to probe the valence band tail density of states (DOS) in a-As2 Se3. In the absence of obvious structure, use of optical bias to define a ‘thermalisation energy limit’ allows MPC to be used to determine the attempt-to-escape frequency. Computer modelling of steady state and transient photoconductivity reveals inconsistencies in a charged defect interpretation.
Original language | English |
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Pages (from-to) | 951-954 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 137 |
DOIs | |
Publication status | Published - 1991 |