Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafers

R. Bruggemann, S. Reynolds

    Research output: Contribution to journalArticle

    27 Citations (Scopus)

    Abstract

    A simple, inexpensive method for characterization and quality control of silicon wafers and wafer coatings is proposed, based on the measurement of the complex frequency response of the photoluminescence signal to a sinusoidal excitation, which we term modulated photoluminescence. The minority carrier lifetime may be extracted directly from the phase information without the need for difficult and often imprecise intensity calibrations. We apply modulated photoluminescence measurements to study the influence of interface defects on the recombination of excess carriers in crystalline silicon wafers with different passivation schemes.
    Original languageEnglish
    Pages (from-to)1888-1891
    Number of pages4
    JournalJournal of Non-Crystalline Solids
    Volume352
    Issue number9-20
    DOIs
    Publication statusPublished - Jun 2006

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