Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafers

TY - JOUR

T1 - Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafers

AU - Bruggemann, R.

AU - Reynolds, S.

PY - 2006/6

Y1 - 2006/6

N2 - A simple, inexpensive method for characterization and quality control of silicon wafers and wafer coatings is proposed, based on the measurement of the complex frequency response of the photoluminescence signal to a sinusoidal excitation, which we term modulated photoluminescence. The minority carrier lifetime may be extracted directly from the phase information without the need for difficult and often imprecise intensity calibrations. We apply modulated photoluminescence measurements to study the influence of interface defects on the recombination of excess carriers in crystalline silicon wafers with different passivation schemes.

AB - A simple, inexpensive method for characterization and quality control of silicon wafers and wafer coatings is proposed, based on the measurement of the complex frequency response of the photoluminescence signal to a sinusoidal excitation, which we term modulated photoluminescence. The minority carrier lifetime may be extracted directly from the phase information without the need for difficult and often imprecise intensity calibrations. We apply modulated photoluminescence measurements to study the influence of interface defects on the recombination of excess carriers in crystalline silicon wafers with different passivation schemes.

U2 - 10.1016/j.jnoncrysol.2005.11.092

DO - 10.1016/j.jnoncrysol.2005.11.092

M3 - Article

SN - 1873-4812

VL - 352

SP - 1888

EP - 1891

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 9-20

ER -