Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers

J. Chen (Lead / Corresponding author), W. J. Fan, Y. Ding, Q. Xu, X. W. Zhang, D. W. Xu, S. F. Yoon, D. H. Zhang

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optical spectrum. Our simulation result is in good agreement with the experimental micro-photoluminescence (mu-PL) result which is from InAs/GaAs QD vertical cavity surface emitting lasers (VCSELs) structure wafer at room temperature. Accordingly, our simulation model is used to predict the QD emission from this QD-VCSELs structure wafer at different temperature ranging from 200-400 K. The simulation results show a decrease of 41 me V of QD ground state (GS) transition energy from 250-350 K. The changes of QD GS transition energy with different temperature indicate the possible detuning range for 1.3-mu m wave band QD-VCSELs applications without temperature control. Furthermore, QD differential gain at 300 K is computed based on this model, which will be useful for predicting the intrinsic modulation characteristics of QD-VCSELs.

    Original languageEnglish
    Pages (from-to)449-453
    Number of pages5
    JournalOpto-Electronics Review
    Volume19
    Issue number4
    DOIs
    Publication statusPublished - 2011

    Cite this

    Chen, J. ; Fan, W. J. ; Ding, Y. ; Xu, Q. ; Zhang, X. W. ; Xu, D. W. ; Yoon, S. F. ; Zhang, D. H. / Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers. In: Opto-Electronics Review. 2011 ; Vol. 19, No. 4. pp. 449-453.
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    title = "Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers",
    abstract = "We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optical spectrum. Our simulation result is in good agreement with the experimental micro-photoluminescence (mu-PL) result which is from InAs/GaAs QD vertical cavity surface emitting lasers (VCSELs) structure wafer at room temperature. Accordingly, our simulation model is used to predict the QD emission from this QD-VCSELs structure wafer at different temperature ranging from 200-400 K. The simulation results show a decrease of 41 me V of QD ground state (GS) transition energy from 250-350 K. The changes of QD GS transition energy with different temperature indicate the possible detuning range for 1.3-mu m wave band QD-VCSELs applications without temperature control. Furthermore, QD differential gain at 300 K is computed based on this model, which will be useful for predicting the intrinsic modulation characteristics of QD-VCSELs.",
    author = "J. Chen and Fan, {W. J.} and Y. Ding and Q. Xu and Zhang, {X. W.} and Xu, {D. W.} and Yoon, {S. F.} and Zhang, {D. H.}",
    year = "2011",
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    language = "English",
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    Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers. / Chen, J. (Lead / Corresponding author); Fan, W. J.; Ding, Y.; Xu, Q.; Zhang, X. W.; Xu, D. W.; Yoon, S. F.; Zhang, D. H.

    In: Opto-Electronics Review, Vol. 19, No. 4, 2011, p. 449-453.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers

    AU - Chen, J.

    AU - Fan, W. J.

    AU - Ding, Y.

    AU - Xu, Q.

    AU - Zhang, X. W.

    AU - Xu, D. W.

    AU - Yoon, S. F.

    AU - Zhang, D. H.

    PY - 2011

    Y1 - 2011

    N2 - We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optical spectrum. Our simulation result is in good agreement with the experimental micro-photoluminescence (mu-PL) result which is from InAs/GaAs QD vertical cavity surface emitting lasers (VCSELs) structure wafer at room temperature. Accordingly, our simulation model is used to predict the QD emission from this QD-VCSELs structure wafer at different temperature ranging from 200-400 K. The simulation results show a decrease of 41 me V of QD ground state (GS) transition energy from 250-350 K. The changes of QD GS transition energy with different temperature indicate the possible detuning range for 1.3-mu m wave band QD-VCSELs applications without temperature control. Furthermore, QD differential gain at 300 K is computed based on this model, which will be useful for predicting the intrinsic modulation characteristics of QD-VCSELs.

    AB - We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optical spectrum. Our simulation result is in good agreement with the experimental micro-photoluminescence (mu-PL) result which is from InAs/GaAs QD vertical cavity surface emitting lasers (VCSELs) structure wafer at room temperature. Accordingly, our simulation model is used to predict the QD emission from this QD-VCSELs structure wafer at different temperature ranging from 200-400 K. The simulation results show a decrease of 41 me V of QD ground state (GS) transition energy from 250-350 K. The changes of QD GS transition energy with different temperature indicate the possible detuning range for 1.3-mu m wave band QD-VCSELs applications without temperature control. Furthermore, QD differential gain at 300 K is computed based on this model, which will be useful for predicting the intrinsic modulation characteristics of QD-VCSELs.

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