New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality

M. Ruiz, N. Michel, M. Calligaro, Y. Robert, M. Krakowski, D. I. Nikitichev, M. A. Cataluna, D. Livshits, E. U. Rafailov

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.

    Original languageEnglish
    Title of host publicationSemiconductor Laser Conference (ISLC), 2010 22nd IEEE International
    Place of PublicationNEW YORK
    PublisherIEEE Computer Society
    Pages170-171
    Number of pages2
    ISBN (Print)9781424456833
    DOIs
    Publication statusPublished - 2010
    Event22nd IEEE International Semiconductor Laser Conference - Kyoto, Japan
    Duration: 26 Sep 201030 Sep 2010
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519

    Conference

    Conference22nd IEEE International Semiconductor Laser Conference
    CountryJapan
    CityKyoto
    Period26/09/1030/09/10
    Internet address

    Keywords

    • Tapered lasers
    • Quantum Dots
    • mode locking
    • gain guiding
    • peak power
    • divergence
    • beam quality

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