New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality

M. Ruiz, N. Michel, M. Calligaro, Y. Robert, M. Krakowski, D. I. Nikitichev, M. A. Cataluna, D. Livshits, E. U. Rafailov

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.

    Original languageEnglish
    Title of host publicationSemiconductor Laser Conference (ISLC), 2010 22nd IEEE International
    Place of PublicationNEW YORK
    PublisherIEEE Computer Society
    Pages170-171
    Number of pages2
    ISBN (Print)9781424456833
    DOIs
    Publication statusPublished - 2010
    Event22nd IEEE International Semiconductor Laser Conference - Kyoto, Japan
    Duration: 26 Sep 201030 Sep 2010
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519

    Conference

    Conference22nd IEEE International Semiconductor Laser Conference
    CountryJapan
    CityKyoto
    Period26/09/1030/09/10
    Internet address

    Keywords

    • Tapered lasers
    • Quantum Dots
    • mode locking
    • gain guiding
    • peak power
    • divergence
    • beam quality

    Cite this

    Ruiz, M., Michel, N., Calligaro, M., Robert, Y., Krakowski, M., Nikitichev, D. I., ... Rafailov, E. U. (2010). New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality. In Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International (pp. 170-171). NEW YORK: IEEE Computer Society. https://doi.org/10.1109/ISLC.2010.5642658
    Ruiz, M. ; Michel, N. ; Calligaro, M. ; Robert, Y. ; Krakowski, M. ; Nikitichev, D. I. ; Cataluna, M. A. ; Livshits, D. ; Rafailov, E. U. . / New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality. Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International . NEW YORK : IEEE Computer Society, 2010. pp. 170-171
    @inproceedings{c9c225d4cf3946dcbd993ae047edaf98,
    title = "New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality",
    abstract = "With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.",
    keywords = "Tapered lasers, Quantum Dots, mode locking, gain guiding, peak power, divergence, beam quality",
    author = "M. Ruiz and N. Michel and M. Calligaro and Y. Robert and M. Krakowski and Nikitichev, {D. I.} and Cataluna, {M. A.} and D. Livshits and Rafailov, {E. U.}",
    note = "Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International",
    year = "2010",
    doi = "10.1109/ISLC.2010.5642658",
    language = "English",
    isbn = "9781424456833",
    pages = "170--171",
    booktitle = "Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International",
    publisher = "IEEE Computer Society",

    }

    Ruiz, M, Michel, N, Calligaro, M, Robert, Y, Krakowski, M, Nikitichev, DI, Cataluna, MA, Livshits, D & Rafailov, EU 2010, New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality. in Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International . IEEE Computer Society, NEW YORK, pp. 170-171, 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26/09/10. https://doi.org/10.1109/ISLC.2010.5642658

    New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality. / Ruiz, M.; Michel, N.; Calligaro, M.; Robert, Y.; Krakowski, M.; Nikitichev, D. I.; Cataluna, M. A. ; Livshits, D.; Rafailov, E. U. .

    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International . NEW YORK : IEEE Computer Society, 2010. p. 170-171.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    TY - GEN

    T1 - New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality

    AU - Ruiz, M.

    AU - Michel, N.

    AU - Calligaro, M.

    AU - Robert, Y.

    AU - Krakowski, M.

    AU - Nikitichev, D. I.

    AU - Cataluna, M. A.

    AU - Livshits, D.

    AU - Rafailov, E. U.

    N1 - Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International

    PY - 2010

    Y1 - 2010

    N2 - With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.

    AB - With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.

    KW - Tapered lasers

    KW - Quantum Dots

    KW - mode locking

    KW - gain guiding

    KW - peak power

    KW - divergence

    KW - beam quality

    U2 - 10.1109/ISLC.2010.5642658

    DO - 10.1109/ISLC.2010.5642658

    M3 - Conference contribution

    SN - 9781424456833

    SP - 170

    EP - 171

    BT - Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International

    PB - IEEE Computer Society

    CY - NEW YORK

    ER -

    Ruiz M, Michel N, Calligaro M, Robert Y, Krakowski M, Nikitichev DI et al. New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality. In Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International . NEW YORK: IEEE Computer Society. 2010. p. 170-171 https://doi.org/10.1109/ISLC.2010.5642658