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New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality

  • M. Ruiz
  • , N. Michel
  • , M. Calligaro
  • , Y. Robert
  • , M. Krakowski
  • , D. I. Nikitichev
  • , M. A. Cataluna
  • , D. Livshits
  • , E. U. Rafailov

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.

    Original languageEnglish
    Title of host publicationSemiconductor Laser Conference (ISLC), 2010 22nd IEEE International
    Place of PublicationNEW YORK
    PublisherIEEE Computer Society
    Pages170-171
    Number of pages2
    ISBN (Print)9781424456833
    DOIs
    Publication statusPublished - 2010
    Event22nd IEEE International Semiconductor Laser Conference - Kyoto, Japan
    Duration: 26 Sept 201030 Sept 2010
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5623519

    Conference

    Conference22nd IEEE International Semiconductor Laser Conference
    Country/TerritoryJapan
    CityKyoto
    Period26/09/1030/09/10
    Internet address

    Keywords

    • Tapered lasers
    • Quantum Dots
    • mode locking
    • gain guiding
    • peak power
    • divergence
    • beam quality

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