Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure

Ed A. Shaw, Adrian H. Quarterman, Andrew P. Turnbull, Theo Chen Sverre, C. Robin Head, Anne C. Tropper, Keith G. Wilcox

Research output: Contribution to journalArticle

5 Citations (Scopus)
108 Downloads (Pure)

Abstract

We characterize the nonlinear lens in an antiresonant 11 quantum well InGaAs/GaAsP semiconductor disk laser gain structure designed for operation at 1035 nm using a reflection-type z-scan technique. We probe at a wavelength of 1035 nm and with a sub-picosecond pulse duration. The measured n2 was within the range of −5.6 × 10−13 cm2/W < n2 < −3.1 × 10−13 cm2/W.
Original languageEnglish
Pages (from-to)1395-1398
Number of pages4
JournalIEEE Photonics Technology Letters
Volume28
Issue number13
Early online date24 Mar 2016
DOIs
Publication statusPublished - 1 Jul 2016

Fingerprint

Videodisks
picosecond pulses
Semiconductor quantum wells
Lenses
pulse duration
lenses
quantum wells
Semiconductor materials
probes
lasers

Keywords

  • Semiconductor lasers
  • quantum well lasers
  • Nonlinear optics
  • Ultrafast optics

Cite this

Shaw, E. A., Quarterman, A. H., Turnbull, A. P., Chen Sverre, T., Head, C. R., Tropper, A. C., & Wilcox, K. G. (2016). Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure. IEEE Photonics Technology Letters, 28(13), 1395-1398. https://doi.org/10.1109/LPT.2016.2543302
Shaw, Ed A. ; Quarterman, Adrian H. ; Turnbull, Andrew P. ; Chen Sverre, Theo ; Head, C. Robin ; Tropper, Anne C. ; Wilcox, Keith G. / Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure. In: IEEE Photonics Technology Letters. 2016 ; Vol. 28, No. 13. pp. 1395-1398.
@article{86d07e253148459dbe7862c5daa21d22,
title = "Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure",
abstract = "We characterize the nonlinear lens in an antiresonant 11 quantum well InGaAs/GaAsP semiconductor disk laser gain structure designed for operation at 1035 nm using a reflection-type z-scan technique. We probe at a wavelength of 1035 nm and with a sub-picosecond pulse duration. The measured n2 was within the range of −5.6 × 10−13 cm2/W < n2 < −3.1 × 10−13 cm2/W.",
keywords = "Semiconductor lasers, quantum well lasers, Nonlinear optics, Ultrafast optics",
author = "Shaw, {Ed A.} and Quarterman, {Adrian H.} and Turnbull, {Andrew P.} and {Chen Sverre}, Theo and Head, {C. Robin} and Tropper, {Anne C.} and Wilcox, {Keith G.}",
note = "This work was supported in part by the U.K. Engineering and Physical Sciences Research Council under Grant EP/J017043/2 and in part by U.K. Quantum Technology Hub for Sensors and Metrology Grant EP/M013294/1.",
year = "2016",
month = "7",
day = "1",
doi = "10.1109/LPT.2016.2543302",
language = "English",
volume = "28",
pages = "1395--1398",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers",
number = "13",

}

Shaw, EA, Quarterman, AH, Turnbull, AP, Chen Sverre, T, Head, CR, Tropper, AC & Wilcox, KG 2016, 'Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure', IEEE Photonics Technology Letters, vol. 28, no. 13, pp. 1395-1398. https://doi.org/10.1109/LPT.2016.2543302

Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure. / Shaw, Ed A.; Quarterman, Adrian H.; Turnbull, Andrew P.; Chen Sverre, Theo; Head, C. Robin; Tropper, Anne C.; Wilcox, Keith G.

In: IEEE Photonics Technology Letters, Vol. 28, No. 13, 01.07.2016, p. 1395-1398.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure

AU - Shaw, Ed A.

AU - Quarterman, Adrian H.

AU - Turnbull, Andrew P.

AU - Chen Sverre, Theo

AU - Head, C. Robin

AU - Tropper, Anne C.

AU - Wilcox, Keith G.

N1 - This work was supported in part by the U.K. Engineering and Physical Sciences Research Council under Grant EP/J017043/2 and in part by U.K. Quantum Technology Hub for Sensors and Metrology Grant EP/M013294/1.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - We characterize the nonlinear lens in an antiresonant 11 quantum well InGaAs/GaAsP semiconductor disk laser gain structure designed for operation at 1035 nm using a reflection-type z-scan technique. We probe at a wavelength of 1035 nm and with a sub-picosecond pulse duration. The measured n2 was within the range of −5.6 × 10−13 cm2/W < n2 < −3.1 × 10−13 cm2/W.

AB - We characterize the nonlinear lens in an antiresonant 11 quantum well InGaAs/GaAsP semiconductor disk laser gain structure designed for operation at 1035 nm using a reflection-type z-scan technique. We probe at a wavelength of 1035 nm and with a sub-picosecond pulse duration. The measured n2 was within the range of −5.6 × 10−13 cm2/W < n2 < −3.1 × 10−13 cm2/W.

KW - Semiconductor lasers

KW - quantum well lasers

KW - Nonlinear optics

KW - Ultrafast optics

U2 - 10.1109/LPT.2016.2543302

DO - 10.1109/LPT.2016.2543302

M3 - Article

VL - 28

SP - 1395

EP - 1398

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 13

ER -

Shaw EA, Quarterman AH, Turnbull AP, Chen Sverre T, Head CR, Tropper AC et al. Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure. IEEE Photonics Technology Letters. 2016 Jul 1;28(13):1395-1398. https://doi.org/10.1109/LPT.2016.2543302