We characterize the nonlinear lens in an antiresonant 11 quantum well InGaAs/GaAsP semiconductor disk laser gain structure designed for operation at 1035 nm using a reflection-type z-scan technique. We probe at a wavelength of 1035 nm and with a sub-picosecond pulse duration. The measured n2 was within the range of −5.6 × 10−13 cm2/W < n2 < −3.1 × 10−13 cm2/W.
- Semiconductor lasers
- quantum well lasers
- Nonlinear optics
- Ultrafast optics
Shaw, E. A., Quarterman, A. H., Turnbull, A. P., Chen Sverre, T., Head, C. R., Tropper, A. C., & Wilcox, K. G. (2016). Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure. IEEE Photonics Technology Letters, 28(13), 1395-1398. https://doi.org/10.1109/LPT.2016.2543302