Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure

Ed A. Shaw, Adrian H. Quarterman, Andrew P. Turnbull, Theo Chen Sverre, C. Robin Head, Anne C. Tropper, Keith G. Wilcox

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Abstract

We characterize the nonlinear lens in an antiresonant 11 quantum well InGaAs/GaAsP semiconductor disk laser gain structure designed for operation at 1035 nm using a reflection-type z-scan technique. We probe at a wavelength of 1035 nm and with a sub-picosecond pulse duration. The measured n2 was within the range of −5.6 × 10−13 cm2/W < n2 < −3.1 × 10−13 cm2/W.
Original languageEnglish
Pages (from-to)1395-1398
Number of pages4
JournalIEEE Photonics Technology Letters
Volume28
Issue number13
Early online date24 Mar 2016
DOIs
Publication statusPublished - 1 Jul 2016

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Keywords

  • Semiconductor lasers
  • quantum well lasers
  • Nonlinear optics
  • Ultrafast optics

Cite this

Shaw, E. A., Quarterman, A. H., Turnbull, A. P., Chen Sverre, T., Head, C. R., Tropper, A. C., & Wilcox, K. G. (2016). Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure. IEEE Photonics Technology Letters, 28(13), 1395-1398. https://doi.org/10.1109/LPT.2016.2543302