Abstract
We characterize the nonlinear lens in an antiresonant
11 quantum well InGaAs/GaAsP semiconductor disk
laser gain structure designed for operation at 1035 nm using
a reflection-type z-scan technique. We probe at a wavelength
of 1035 nm and with a sub-picosecond pulse duration. The
measured n2 was within the range of −5.6 × 10−13 cm2/W <
n2 < −3.1 × 10−13 cm2/W.
| Original language | English |
|---|---|
| Pages (from-to) | 1395-1398 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 28 |
| Issue number | 13 |
| Early online date | 24 Mar 2016 |
| DOIs | |
| Publication status | Published - 1 Jul 2016 |
Keywords
- Semiconductor lasers
- quantum well lasers
- Nonlinear optics
- Ultrafast optics
Fingerprint
Dive into the research topics of 'Non-Linear Lensing in an Unpumped Antiresonant Semiconductor Disk Laser Gain Structure'. Together they form a unique fingerprint.Projects
- 1 Finished
-
Tuneable Gigahertz Mode Spaced Frequency Combs (Fellowship)
Wilcox, K. (Investigator)
1/10/13 → 28/02/18
Project: Research
Datasets
-
Measurements of Non-Linear Lensing in an Unpumped Semiconductor Disk Laser Gain Structures - dataset
Shaw, E. A. (Creator), Quarterman, A. (Contributor), Turnbull, A. P. (Contributor), Chen-Sverre, T. (Contributor), Head, C. R. (Contributor), Tropper, A. C. (Contributor) & Wilcox, K. G. (Contributor), University of Dundee, 7 Apr 2016
DOI: 10.15132/10000109
Dataset
File
Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver