Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

Henrik Porte, Peter Uhd Jepsen, Nart Daghestani, Edik Rafailov, Dmitry Turchinovich

    Research output: Chapter in Book/Report/Conference proceedingOther chapter contribution

    Abstract

    Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.
    Original languageEnglish
    Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
    Pages626-627
    Number of pages2
    ISBN (Electronic)9781424436811
    DOIs
    Publication statusPublished - 2009

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  • Cite this

    Porte, H., Jepsen, P. U., Daghestani, N., Rafailov, E., & Turchinovich, D. (2009). Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp. 626-627) https://doi.org/10.1109/LEOS.2009.5343415