Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

Henrik Porte; Peter Uhd Jepsen; Nart Daghestani; Edik Rafailov; Dmitry Turchinovich

doi:10.1109/LEOS.2009.5343415

Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

Henrik Porte
, Peter Uhd Jepsen
, Nart Daghestani
, Edik Rafailov
, Dmitry Turchinovich

Research output: Chapter in Book/Report/Conference proceeding › Other chapter contribution

Abstract

Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

Original language	English
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages	626-627
Number of pages	2
ISBN (Electronic)	9781424436811
DOIs	https://doi.org/10.1109/LEOS.2009.5343415
Publication status	Published - 2009

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10.1109/LEOS.2009.5343415

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title = "Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy",

abstract = "Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.",

author = "Henrik Porte and Jepsen, \{Peter Uhd\} and Nart Daghestani and Edik Rafailov and Dmitry Turchinovich",

year = "2009",

doi = "10.1109/LEOS.2009.5343415",

language = "English",

isbn = "9781424436804",

pages = "626--627",

booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

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T1 - Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

AU - Porte, Henrik

AU - Jepsen, Peter Uhd

AU - Daghestani, Nart

AU - Rafailov, Edik

AU - Turchinovich, Dmitry

PY - 2009

Y1 - 2009

N2 - Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

AB - Depending on the photoexcitation wavelength, we either observe the trapping of the free carriers into quantum dots, or release of carriers from quantum dot ground state into conducting states of the quantum dot sample.

UR - https://www.scopus.com/pages/publications/72549119867

U2 - 10.1109/LEOS.2009.5343415

DO - 10.1109/LEOS.2009.5343415

M3 - Other chapter contribution

AN - SCOPUS:72549119867

SN - 9781424436804

SP - 626

EP - 627

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -

Observation of trapping and release of carriers in InGaAs/GaAs quantum dots by ultrafast THz spectroscopy

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