Optical properties of polycrystalline silicon thin films deposited by single-wafer chemical vapor deposition

M. Marazzi; M. E. Giardini; A. Borghesi; A. Sassella; M. Alessandri; G. Ferroni

doi:10.1016/S0040-6090(96)09376-5

Optical properties of polycrystalline silicon thin films deposited by single-wafer chemical vapor deposition

M. Marazzi
, M. E. Giardini
, A. Borghesi
, A. Sassella
, M. Alessandri
, G. Ferroni

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The ellipsometric study of polycrystalline silicon films deposited using a single wafer rapid thermal chemical vapor deposition reactor under varying conditions of temperature and doping is presented. In particular, using spectroscopic ellipsometry in the visible spectral range, we determined the thickness of the films and the structural changes as a function of the deposition temperature. A different film structure, from amorphous to polycrystalline, has been found for the different deposition temperatures. A shift to lower values of the transition temperature which marks the structural change and a decrease in the deposition rate as the doping level is increased are observed. Moreover, from the ellipsometric results the optical functions of the different samples were evaluated.

Original language	English
Pages (from-to)	91-93
Number of pages	3
Journal	Thin Solid Films
Volume	296
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)09376-5
Publication status	Published - Mar 1997

Keywords

Doping
Optical properties
Single-wafer chemical vapour deposition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(96)09376-5

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title = "Optical properties of polycrystalline silicon thin films deposited by single-wafer chemical vapor deposition",

abstract = "The ellipsometric study of polycrystalline silicon films deposited using a single wafer rapid thermal chemical vapor deposition reactor under varying conditions of temperature and doping is presented. In particular, using spectroscopic ellipsometry in the visible spectral range, we determined the thickness of the films and the structural changes as a function of the deposition temperature. A different film structure, from amorphous to polycrystalline, has been found for the different deposition temperatures. A shift to lower values of the transition temperature which marks the structural change and a decrease in the deposition rate as the doping level is increased are observed. Moreover, from the ellipsometric results the optical functions of the different samples were evaluated.",

keywords = "Doping, Optical properties, Single-wafer chemical vapour deposition",

author = "M. Marazzi and Giardini, \{M. E.\} and A. Borghesi and A. Sassella and M. Alessandri and G. Ferroni",

note = "Copyright {\textcopyright} 1997 Published by Elsevier B.V.",

year = "1997",

month = mar,

doi = "10.1016/S0040-6090(96)09376-5",

language = "English",

volume = "296",

pages = "91--93",

journal = "Thin Solid Films",

issn = "0040-6090",

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number = "1-2",

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TY - JOUR

T1 - Optical properties of polycrystalline silicon thin films deposited by single-wafer chemical vapor deposition

AU - Marazzi, M.

AU - Giardini, M. E.

AU - Borghesi, A.

AU - Sassella, A.

AU - Alessandri, M.

AU - Ferroni, G.

PY - 1997/3

Y1 - 1997/3

N2 - The ellipsometric study of polycrystalline silicon films deposited using a single wafer rapid thermal chemical vapor deposition reactor under varying conditions of temperature and doping is presented. In particular, using spectroscopic ellipsometry in the visible spectral range, we determined the thickness of the films and the structural changes as a function of the deposition temperature. A different film structure, from amorphous to polycrystalline, has been found for the different deposition temperatures. A shift to lower values of the transition temperature which marks the structural change and a decrease in the deposition rate as the doping level is increased are observed. Moreover, from the ellipsometric results the optical functions of the different samples were evaluated.

AB - The ellipsometric study of polycrystalline silicon films deposited using a single wafer rapid thermal chemical vapor deposition reactor under varying conditions of temperature and doping is presented. In particular, using spectroscopic ellipsometry in the visible spectral range, we determined the thickness of the films and the structural changes as a function of the deposition temperature. A different film structure, from amorphous to polycrystalline, has been found for the different deposition temperatures. A shift to lower values of the transition temperature which marks the structural change and a decrease in the deposition rate as the doping level is increased are observed. Moreover, from the ellipsometric results the optical functions of the different samples were evaluated.

KW - Doping

KW - Optical properties

KW - Single-wafer chemical vapour deposition

UR - https://www.scopus.com/pages/publications/0031095740

U2 - 10.1016/S0040-6090(96)09376-5

DO - 10.1016/S0040-6090(96)09376-5

M3 - Article

AN - SCOPUS:0031095740

SN - 0040-6090

VL - 296

SP - 91

EP - 93

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Optical properties of polycrystalline silicon thin films deposited by single-wafer chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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