Optically pumped semiconductor quantum dot disk laser operating at 1180 nm

Jussi Rautiainen, Igor Krestnikov, M. Butkus, Edik U. Rafailov, Oleg G. Okhotnikov

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    19 Citations (Scopus)

    Abstract

    We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M-2 < 1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. (C) 2010 Optical Society of America

    Original languageEnglish
    Pages (from-to)694-696
    Number of pages3
    JournalOptics Letters
    Volume35
    Issue number5
    DOIs
    Publication statusPublished - 1 Mar 2010

    Keywords

    • SURFACE-EMITTING LASER
    • HIGH-POWER

    Cite this

    Rautiainen, J., Krestnikov, I., Butkus, M., Rafailov, E. U., & Okhotnikov, O. G. (2010). Optically pumped semiconductor quantum dot disk laser operating at 1180 nm. Optics Letters, 35(5), 694-696. https://doi.org/10.1364/OL.35.000694