Optically pumped semiconductor quantum dot disk laser operating at 1180 nm

Jussi Rautiainen, Igor Krestnikov, M. Butkus, Edik U. Rafailov, Oleg G. Okhotnikov

    Research output: Contribution to journalArticle

    19 Citations (Scopus)

    Abstract

    We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M-2 < 1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. (C) 2010 Optical Society of America

    Original languageEnglish
    Pages (from-to)694-696
    Number of pages3
    JournalOptics Letters
    Volume35
    Issue number5
    DOIs
    Publication statusPublished - 1 Mar 2010

    Keywords

    • SURFACE-EMITTING LASER
    • HIGH-POWER

    Cite this

    Rautiainen, J., Krestnikov, I., Butkus, M., Rafailov, E. U., & Okhotnikov, O. G. (2010). Optically pumped semiconductor quantum dot disk laser operating at 1180 nm. Optics Letters, 35(5), 694-696. https://doi.org/10.1364/OL.35.000694
    Rautiainen, Jussi ; Krestnikov, Igor ; Butkus, M. ; Rafailov, Edik U. ; Okhotnikov, Oleg G. / Optically pumped semiconductor quantum dot disk laser operating at 1180 nm. In: Optics Letters. 2010 ; Vol. 35, No. 5. pp. 694-696.
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    abstract = "We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M-2 < 1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. (C) 2010 Optical Society of America",
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    Rautiainen, J, Krestnikov, I, Butkus, M, Rafailov, EU & Okhotnikov, OG 2010, 'Optically pumped semiconductor quantum dot disk laser operating at 1180 nm', Optics Letters, vol. 35, no. 5, pp. 694-696. https://doi.org/10.1364/OL.35.000694

    Optically pumped semiconductor quantum dot disk laser operating at 1180 nm. / Rautiainen, Jussi; Krestnikov, Igor; Butkus, M.; Rafailov, Edik U.; Okhotnikov, Oleg G.

    In: Optics Letters, Vol. 35, No. 5, 01.03.2010, p. 694-696.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Optically pumped semiconductor quantum dot disk laser operating at 1180 nm

    AU - Rautiainen, Jussi

    AU - Krestnikov, Igor

    AU - Butkus, M.

    AU - Rafailov, Edik U.

    AU - Okhotnikov, Oleg G.

    PY - 2010/3/1

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    N2 - We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M-2 < 1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. (C) 2010 Optical Society of America

    AB - We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M-2 < 1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. (C) 2010 Optical Society of America

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    KW - HIGH-POWER

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    DO - 10.1364/OL.35.000694

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    Rautiainen J, Krestnikov I, Butkus M, Rafailov EU, Okhotnikov OG. Optically pumped semiconductor quantum dot disk laser operating at 1180 nm. Optics Letters. 2010 Mar 1;35(5):694-696. https://doi.org/10.1364/OL.35.000694