Optically pumped semiconductor quantum dot disk laser operating at 1180 nm

Jussi Rautiainen; Igor Krestnikov; M. Butkus; Edik U. Rafailov; Oleg G. Okhotnikov

doi:10.1364/OL.35.000694

Optically pumped semiconductor quantum dot disk laser operating at 1180 nm

Jussi Rautiainen, Igor Krestnikov, M. Butkus, Edik U. Rafailov, Oleg G. Okhotnikov

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M-2 < 1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. (C) 2010 Optical Society of America

Original language	English
Pages (from-to)	694-696
Number of pages	3
Journal	Optics Letters
Volume	35
Issue number	5
DOIs	https://doi.org/10.1364/OL.35.000694
Publication status	Published - 1 Mar 2010

Keywords

SURFACE-EMITTING LASER
HIGH-POWER

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10.1364/OL.35.000694

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title = "Optically pumped semiconductor quantum dot disk laser operating at 1180 nm",

abstract = "We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M-2 < 1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. (C) 2010 Optical Society of America",

keywords = "SURFACE-EMITTING LASER, HIGH-POWER",

author = "Jussi Rautiainen and Igor Krestnikov and M. Butkus and Rafailov, \{Edik U.\} and Okhotnikov, \{Oleg G.\}",

year = "2010",

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doi = "10.1364/OL.35.000694",

language = "English",

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journal = "Optics Letters",

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T1 - Optically pumped semiconductor quantum dot disk laser operating at 1180 nm

AU - Rautiainen, Jussi

AU - Krestnikov, Igor

AU - Butkus, M.

AU - Rafailov, Edik U.

AU - Okhotnikov, Oleg G.

PY - 2010/3/1

Y1 - 2010/3/1

N2 - We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M-2 < 1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. (C) 2010 Optical Society of America

AB - We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M-2 < 1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. (C) 2010 Optical Society of America

KW - SURFACE-EMITTING LASER

KW - HIGH-POWER

U2 - 10.1364/OL.35.000694

DO - 10.1364/OL.35.000694

M3 - Article

SN - 0146-9592

VL - 35

SP - 694

EP - 696

JO - Optics Letters

JF - Optics Letters

IS - 5

ER -

Optically pumped semiconductor quantum dot disk laser operating at 1180 nm

Abstract

Keywords

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