P-i-n junction quantum dot saturable absorber mirror: Electrical control of ultrafast dynamics

S.A. Zolotovskaya, M. Butkus, E.U. Rafailov, R. Häring, A. Able, W. Kaenders, I.L. Krestnikov, D.A. Livshits

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    Abstract

    We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and-20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias.
    Original languageEnglish
    Pages (from-to)9038-9045
    Number of pages8
    JournalOptics Express
    Volume20
    Issue number8
    DOIs
    Publication statusPublished - 9 Apr 2012

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  • Cite this

    Zolotovskaya, S. A., Butkus, M., Rafailov, E. U., Häring, R., Able, A., Kaenders, W., Krestnikov, I. L., & Livshits, D. A. (2012). P-i-n junction quantum dot saturable absorber mirror: Electrical control of ultrafast dynamics. Optics Express, 20(8), 9038-9045. https://doi.org/10.1364/OE.20.009038