We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and-20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias.
Zolotovskaya, S. A., Butkus, M., Rafailov, E. U., Häring, R., Able, A., Kaenders, W., Krestnikov, I. L., & Livshits, D. A. (2012). P-i-n junction quantum dot saturable absorber mirror: Electrical control of ultrafast dynamics. Optics Express, 20(8), 9038-9045. https://doi.org/10.1364/OE.20.009038