P-i-n junction quantum dot saturable absorber mirror: Electrical control of ultrafast dynamics

S.A. Zolotovskaya; M. Butkus; E.U. Rafailov; R. Häring; A. Able; W. Kaenders; I.L. Krestnikov; D.A. Livshits

doi:10.1364/OE.20.009038

P-i-n junction quantum dot saturable absorber mirror: Electrical control of ultrafast dynamics

S.A. Zolotovskaya, M. Butkus, E.U. Rafailov, R. Häring, A. Able, W. Kaenders, I.L. Krestnikov, D.A. Livshits

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and-20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias.

Original language	English
Pages (from-to)	9038-9045
Number of pages	8
Journal	Optics Express
Volume	20
Issue number	8
DOIs	https://doi.org/10.1364/OE.20.009038
Publication status	Published - 9 Apr 2012

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AU - Zolotovskaya, S.A.

AU - Butkus, M.

AU - Rafailov, E.U.

AU - Häring, R.

AU - Able, A.

AU - Kaenders, W.

AU - Krestnikov, I.L.

AU - Livshits, D.A.

PY - 2012/4/9

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AB - We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and-20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias.

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P-i-n junction quantum dot saturable absorber mirror: Electrical control of ultrafast dynamics

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