@inproceedings{20c7215b2e9c4ff59f09b49a35e4eb22,
title = "Passively mode-locked 832-nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3-ps pulses at 1.9-GHz repetition rate",
abstract = "We report the first passively mode-locked 830-nm vertical-external-cavity surface-emitting laser. A semiconductor saturable absorber mirror with carrier recovery time governed by surface recombination was used to demonstrate pulses of 15.3 ps duration.",
author = "Wilcox, {Keith G.} and Zakaria Mihoubi and Elsmere, {Stephen P.} and Quarterman, {Adrian H.} and Foreman, {Hannah D.} and Anne Tropper",
year = "2008",
month = sep,
day = "15",
doi = "10.1109/CLEO.2008.4552021",
language = "English",
isbn = "9781557528599",
series = "Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series",
publisher = "IEEE",
booktitle = "2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS",
note = "Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 ; Conference date: 04-05-2008 Through 09-05-2008",
}