Passively mode-locked 832-nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3-ps pulses at 1.9-GHz repetition rate

Keith G. Wilcox, Zakaria Mihoubi, Stephen P. Elsmere, Adrian H. Quarterman, Hannah D. Foreman, Anne Tropper

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We report the first passively mode-locked 830-nm vertical-external-cavity surface-emitting laser. A semiconductor saturable absorber mirror with carrier recovery time governed by surface recombination was used to demonstrate pulses of 15.3 ps duration.

    Original languageEnglish
    Title of host publication2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS
    PublisherIEEE
    ISBN (Print)9781557528599
    DOIs
    Publication statusPublished - 15 Sep 2008
    EventConference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 - San Jose, CA, United States
    Duration: 4 May 20089 May 2008

    Publication series

    NameConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

    Conference

    ConferenceConference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008
    Country/TerritoryUnited States
    CitySan Jose, CA
    Period4/05/089/05/08

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