Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate

K. G. Wilcox, Z. Mihoubi, S. Elsmere, A. Quarterman, H. D. Foreman, S. Hashimoto, T. Südmeyer, U. Keller, A. Tropper

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.

    Original languageEnglish
    Pages (from-to)1469-1470
    Number of pages2
    JournalElectronics Letters
    Volume44
    Issue number25
    DOIs
    Publication statusPublished - 12 Dec 2008

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    Semiconductor saturable absorber mirrors
    Surface emitting lasers
    Semiconductor lasers
    Laser pulses
    Recovery

    Cite this

    Wilcox, K. G. ; Mihoubi, Z. ; Elsmere, S. ; Quarterman, A. ; Foreman, H. D. ; Hashimoto, S. ; Südmeyer, T. ; Keller, U. ; Tropper, A. / Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate. In: Electronics Letters. 2008 ; Vol. 44, No. 25. pp. 1469-1470.
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    abstract = "A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.",
    author = "Wilcox, {K. G.} and Z. Mihoubi and S. Elsmere and A. Quarterman and Foreman, {H. D.} and S. Hashimoto and T. S{\"u}dmeyer and U. Keller and A. Tropper",
    year = "2008",
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    doi = "10.1049/el:20089345",
    language = "English",
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    Wilcox, KG, Mihoubi, Z, Elsmere, S, Quarterman, A, Foreman, HD, Hashimoto, S, Südmeyer, T, Keller, U & Tropper, A 2008, 'Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate', Electronics Letters, vol. 44, no. 25, pp. 1469-1470. https://doi.org/10.1049/el:20089345

    Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate. / Wilcox, K. G.; Mihoubi, Z.; Elsmere, S.; Quarterman, A.; Foreman, H. D.; Hashimoto, S.; Südmeyer, T.; Keller, U.; Tropper, A.

    In: Electronics Letters, Vol. 44, No. 25, 12.12.2008, p. 1469-1470.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate

    AU - Wilcox, K. G.

    AU - Mihoubi, Z.

    AU - Elsmere, S.

    AU - Quarterman, A.

    AU - Foreman, H. D.

    AU - Hashimoto, S.

    AU - Südmeyer, T.

    AU - Keller, U.

    AU - Tropper, A.

    PY - 2008/12/12

    Y1 - 2008/12/12

    N2 - A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.

    AB - A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.

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    DO - 10.1049/el:20089345

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