Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate

K. G. Wilcox, Z. Mihoubi, S. Elsmere, A. Quarterman, H. D. Foreman, S. Hashimoto, T. Südmeyer, U. Keller, A. Tropper

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    10 Citations (Scopus)

    Abstract

    A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.

    Original languageEnglish
    Pages (from-to)1469-1470
    Number of pages2
    JournalElectronics Letters
    Volume44
    Issue number25
    DOIs
    Publication statusPublished - 12 Dec 2008

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