Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate

K. G. Wilcox; Z. Mihoubi; S. Elsmere; A. Quarterman; H. D. Foreman; S. Hashimoto; T. Südmeyer; U. Keller; A. Tropper

doi:10.1049/el:20089345

Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate

K. G. Wilcox, Z. Mihoubi, S. Elsmere, A. Quarterman, H. D. Foreman, S. Hashimoto, T. Südmeyer, U. Keller, A. Tropper

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.

Original language	English
Pages (from-to)	1469-1470
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	25
DOIs	https://doi.org/10.1049/el:20089345
Publication status	Published - 12 Dec 2008

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20089345

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title = "Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate",

abstract = "A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.",

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T1 - Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate

AU - Wilcox, K. G.

AU - Mihoubi, Z.

AU - Elsmere, S.

AU - Quarterman, A.

AU - Foreman, H. D.

AU - Hashimoto, S.

AU - Südmeyer, T.

AU - Keller, U.

AU - Tropper, A.

PY - 2008/12/12

Y1 - 2008/12/12

N2 - A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.

AB - A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.

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JF - Electronics Letters

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ER -

Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate

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