Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate

TY - JOUR

T1 - Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9GHz repetition rate

AU - Wilcox, K. G.

AU - Mihoubi, Z.

AU - Elsmere, S.

AU - Quarterman, A.

AU - Foreman, H. D.

AU - Hashimoto, S.

AU - Südmeyer, T.

AU - Keller, U.

AU - Tropper, A.

PY - 2008/12/12

Y1 - 2008/12/12

N2 - A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.

AB - A passively modelocked 832nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3ps at a repetition rate of 1.9GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200ps, respectively, was used to form the pulses.

UR - https://www.scopus.com/pages/publications/57349136367

U2 - 10.1049/el:20089345

DO - 10.1049/el:20089345

M3 - Article

AN - SCOPUS:57349136367

SN - 0013-5194

VL - 44

SP - 1469

EP - 1470

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -