Photoinduced absorption saturation dynamics of InGaAs quantum dot structure dedicated for wavelength 1070 nm

Edgaras Jelmakas, Roland Tomašiunas, Edik Rafailov, Igor Krestnikov

    Research output: Chapter in Book/Report/Conference proceedingOther chapter contribution

    2 Citations (Scopus)

    Abstract

    In this paper, results of investigation of InGaAs quantum dot structure designed as a semiconductor saturable absorber for near-IR are presented. Photoinduced absorption bleaching spectroscopy performed confirm the dedicated wavelength 1070 nm for absorption bleaching of the ground state of quantum dots. Transitions including states from the wetting layer and the ground states have been interpreted to define absorption recovery dynamics on femto- and picosecond time scale. Fast recovery time of absorption was measured for the upper excited energy levels, while the ground state dynamics show relative longer times. Non-degenerate pump-probe technique was applied to investigate the interstate transition dynamics.
    Original languageEnglish
    Title of host publication2010 12th International Conference on Transparent Optical Networks, ICTON 2010
    ISBN (Electronic)9781424477975
    DOIs
    Publication statusPublished - 1 Jan 2010

    Fingerprint

    quantum dots
    saturation
    bleaching
    wavelengths
    ground state
    recovery
    wetting
    absorbers
    energy levels
    pumps
    probes
    spectroscopy

    Cite this

    Jelmakas, E., Tomašiunas, R., Rafailov, E., & Krestnikov, I. (2010). Photoinduced absorption saturation dynamics of InGaAs quantum dot structure dedicated for wavelength 1070 nm. In 2010 12th International Conference on Transparent Optical Networks, ICTON 2010 https://doi.org/10.1109/ICTON.2010.5548985
    Jelmakas, Edgaras ; Tomašiunas, Roland ; Rafailov, Edik ; Krestnikov, Igor. / Photoinduced absorption saturation dynamics of InGaAs quantum dot structure dedicated for wavelength 1070 nm. 2010 12th International Conference on Transparent Optical Networks, ICTON 2010. 2010.
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    abstract = "In this paper, results of investigation of InGaAs quantum dot structure designed as a semiconductor saturable absorber for near-IR are presented. Photoinduced absorption bleaching spectroscopy performed confirm the dedicated wavelength 1070 nm for absorption bleaching of the ground state of quantum dots. Transitions including states from the wetting layer and the ground states have been interpreted to define absorption recovery dynamics on femto- and picosecond time scale. Fast recovery time of absorption was measured for the upper excited energy levels, while the ground state dynamics show relative longer times. Non-degenerate pump-probe technique was applied to investigate the interstate transition dynamics.",
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    Jelmakas, E, Tomašiunas, R, Rafailov, E & Krestnikov, I 2010, Photoinduced absorption saturation dynamics of InGaAs quantum dot structure dedicated for wavelength 1070 nm. in 2010 12th International Conference on Transparent Optical Networks, ICTON 2010. https://doi.org/10.1109/ICTON.2010.5548985

    Photoinduced absorption saturation dynamics of InGaAs quantum dot structure dedicated for wavelength 1070 nm. / Jelmakas, Edgaras; Tomašiunas, Roland; Rafailov, Edik; Krestnikov, Igor.

    2010 12th International Conference on Transparent Optical Networks, ICTON 2010. 2010.

    Research output: Chapter in Book/Report/Conference proceedingOther chapter contribution

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    Jelmakas E, Tomašiunas R, Rafailov E, Krestnikov I. Photoinduced absorption saturation dynamics of InGaAs quantum dot structure dedicated for wavelength 1070 nm. In 2010 12th International Conference on Transparent Optical Networks, ICTON 2010. 2010 https://doi.org/10.1109/ICTON.2010.5548985