TY - CHAP
T1 - Photoinduced transmittance at 1250 nm of InAs/InGaAs quantum dot based semiconductor optical amplifier measured via waveguiding configuration
AU - Jelmakas, E.
AU - Tomašiunas, R.
AU - Vengris, M.
AU - Rafailov, E.
AU - Krestnikov, I.
PY - 2011/1/1
Y1 - 2011/1/1
N2 - New results on investigation of InAs/InGaAs quantum dot structure designed as a waveguide are presented. Photoinduced transmission and absorption recovery measurements using femtosecond pump-probe experiment in a waveguiding configuration, when exciting/probing from the edge of waveguide, were performed at a dedicated wavelength 1250 nm covering the ground state levels of a group of chirped quantum dots. The results of absorption saturation fit well electroluminescence results giving qualitative insight about density of states. From the absorption recovery kinetics picosecond lifetimes for the ground state were considered.
AB - New results on investigation of InAs/InGaAs quantum dot structure designed as a waveguide are presented. Photoinduced transmission and absorption recovery measurements using femtosecond pump-probe experiment in a waveguiding configuration, when exciting/probing from the edge of waveguide, were performed at a dedicated wavelength 1250 nm covering the ground state levels of a group of chirped quantum dots. The results of absorption saturation fit well electroluminescence results giving qualitative insight about density of states. From the absorption recovery kinetics picosecond lifetimes for the ground state were considered.
UR - http://www.scopus.com/inward/record.url?scp=80155145690&partnerID=8YFLogxK
U2 - 10.1109/ICTON.2011.5971177
DO - 10.1109/ICTON.2011.5971177
M3 - Other chapter contribution
AN - SCOPUS:80155145690
SN - 9781457708817
BT - International Conference on Transparent Optical Networks
ER -