Photoinduced transmittance at 1250 nm of InAs/InGaAs quantum dot based semiconductor optical amplifier measured via waveguiding configuration

E. Jelmakas, R. Tomašiunas, M. Vengris, E. Rafailov, I. Krestnikov

    Research output: Chapter in Book/Report/Conference proceedingOther chapter contribution

    Abstract

    New results on investigation of InAs/InGaAs quantum dot structure designed as a waveguide are presented. Photoinduced transmission and absorption recovery measurements using femtosecond pump-probe experiment in a waveguiding configuration, when exciting/probing from the edge of waveguide, were performed at a dedicated wavelength 1250 nm covering the ground state levels of a group of chirped quantum dots. The results of absorption saturation fit well electroluminescence results giving qualitative insight about density of states. From the absorption recovery kinetics picosecond lifetimes for the ground state were considered.
    Original languageEnglish
    Title of host publicationInternational Conference on Transparent Optical Networks
    ISBN (Electronic)9781457708800
    DOIs
    Publication statusPublished - 1 Jan 2011

    Fingerprint

    light amplifiers
    transmittance
    quantum dots
    configurations
    recovery
    waveguides
    ground state
    electroluminescence
    coverings
    pumps
    saturation
    life (durability)
    probes
    kinetics
    wavelengths

    Cite this

    Jelmakas, E., Tomašiunas, R., Vengris, M., Rafailov, E., & Krestnikov, I. (2011). Photoinduced transmittance at 1250 nm of InAs/InGaAs quantum dot based semiconductor optical amplifier measured via waveguiding configuration. In International Conference on Transparent Optical Networks https://doi.org/10.1109/ICTON.2011.5971177
    Jelmakas, E. ; Tomašiunas, R. ; Vengris, M. ; Rafailov, E. ; Krestnikov, I. / Photoinduced transmittance at 1250 nm of InAs/InGaAs quantum dot based semiconductor optical amplifier measured via waveguiding configuration. International Conference on Transparent Optical Networks. 2011.
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    abstract = "New results on investigation of InAs/InGaAs quantum dot structure designed as a waveguide are presented. Photoinduced transmission and absorption recovery measurements using femtosecond pump-probe experiment in a waveguiding configuration, when exciting/probing from the edge of waveguide, were performed at a dedicated wavelength 1250 nm covering the ground state levels of a group of chirped quantum dots. The results of absorption saturation fit well electroluminescence results giving qualitative insight about density of states. From the absorption recovery kinetics picosecond lifetimes for the ground state were considered.",
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    Jelmakas, E, Tomašiunas, R, Vengris, M, Rafailov, E & Krestnikov, I 2011, Photoinduced transmittance at 1250 nm of InAs/InGaAs quantum dot based semiconductor optical amplifier measured via waveguiding configuration. in International Conference on Transparent Optical Networks. https://doi.org/10.1109/ICTON.2011.5971177

    Photoinduced transmittance at 1250 nm of InAs/InGaAs quantum dot based semiconductor optical amplifier measured via waveguiding configuration. / Jelmakas, E.; Tomašiunas, R.; Vengris, M.; Rafailov, E.; Krestnikov, I.

    International Conference on Transparent Optical Networks. 2011.

    Research output: Chapter in Book/Report/Conference proceedingOther chapter contribution

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    AB - New results on investigation of InAs/InGaAs quantum dot structure designed as a waveguide are presented. Photoinduced transmission and absorption recovery measurements using femtosecond pump-probe experiment in a waveguiding configuration, when exciting/probing from the edge of waveguide, were performed at a dedicated wavelength 1250 nm covering the ground state levels of a group of chirped quantum dots. The results of absorption saturation fit well electroluminescence results giving qualitative insight about density of states. From the absorption recovery kinetics picosecond lifetimes for the ground state were considered.

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    Jelmakas E, Tomašiunas R, Vengris M, Rafailov E, Krestnikov I. Photoinduced transmittance at 1250 nm of InAs/InGaAs quantum dot based semiconductor optical amplifier measured via waveguiding configuration. In International Conference on Transparent Optical Networks. 2011 https://doi.org/10.1109/ICTON.2011.5971177