TY - JOUR
T1 - Plant protection by the recombinant, root-colonizing Pseudomonas fluorescens F113rifPCB strain expressing arsenic resistance
T2 - improving rhizoremediation
AU - Ryan, R.P.
AU - Ryan, D.
AU - Dowling, D.N.
N1 - MEDLINE® is the source for the MeSH terms of this document.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Aims: The present study was designed to evaluate the stable insertion and
expression of an arsenic resistance operon in the rhizosphere competent, PCB
degrading strain Pseudomonas fluorescens F113rifPCB (F113rifPCB) and to
investigate its ability to protect plants from arsenic.
Methods and Results: Introduction of the clone pUM3 (arsRDABC) into
F113rifPCB was carried out by triparental conjugation. The resultant arsenic
resistant strain was screened through a number of phenotypic tests including
ability to grow on biphenyl, its rhizosphere competence and plant protection
potential.
Conclusions: Insertion and expression of arsenic resistant operon arsRDABC
(from plasmid R773) into F113rifPCB strain has allowed this strain to grow,
colonize the root and degrade biphenyl (100 mmol l-1) in the presence of
sodium arsenate concentrations of up to 11.5 mmol l-1. The strain retains its
ability to colonize the rhizosphere of plants and appears to provide seed germination protection to arsenic which is not seen by the wild type.
Significance and Impact of the Study: Owing to the significantly improved
growth characteristics of both this rhizobacterium and plant species, the use of
F113rifPCB-ars endowed with arsenic resistance capabilities may be a promising
strategy to remediate mixed organic metal-contaminated sites. These types
of strain could be used in the inoculation of metal accumulation plants for
phytoremediation.
AB - Aims: The present study was designed to evaluate the stable insertion and
expression of an arsenic resistance operon in the rhizosphere competent, PCB
degrading strain Pseudomonas fluorescens F113rifPCB (F113rifPCB) and to
investigate its ability to protect plants from arsenic.
Methods and Results: Introduction of the clone pUM3 (arsRDABC) into
F113rifPCB was carried out by triparental conjugation. The resultant arsenic
resistant strain was screened through a number of phenotypic tests including
ability to grow on biphenyl, its rhizosphere competence and plant protection
potential.
Conclusions: Insertion and expression of arsenic resistant operon arsRDABC
(from plasmid R773) into F113rifPCB strain has allowed this strain to grow,
colonize the root and degrade biphenyl (100 mmol l-1) in the presence of
sodium arsenate concentrations of up to 11.5 mmol l-1. The strain retains its
ability to colonize the rhizosphere of plants and appears to provide seed germination protection to arsenic which is not seen by the wild type.
Significance and Impact of the Study: Owing to the significantly improved
growth characteristics of both this rhizobacterium and plant species, the use of
F113rifPCB-ars endowed with arsenic resistance capabilities may be a promising
strategy to remediate mixed organic metal-contaminated sites. These types
of strain could be used in the inoculation of metal accumulation plants for
phytoremediation.
UR - http://www.scopus.com/inward/record.url?scp=36348972315&partnerID=8YFLogxK
U2 - 10.1111/j.1472-765X.2007.02248.x
DO - 10.1111/j.1472-765X.2007.02248.x
M3 - Article
AN - SCOPUS:36348972315
SN - 0266-8254
VL - 45
SP - 668
EP - 674
JO - Letters in Applied Microbiology
JF - Letters in Applied Microbiology
IS - 6
ER -