Plasma Directed Assembly and Organization: Formation of polymeric nanodots and silicon nanopillars

TY - JOUR

T1 - Plasma Directed Assembly and Organization

T2 - 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas

AU - Smyrnakis, Athanasios

AU - Kontziampasis, Dimitrios

AU - Zeniou, Aggelos

AU - Tserepi, Angeliki

AU - Gogolides, Evangelos

PY - 2010/10/7

Y1 - 2010/10/7

N2 - Periodic, well-defined, features in the nano-scale (dots, pillars, pores etc) are essential in several science and technology fields (photonics, hard disk drives, catalysis, biology). Top-down nano-lithographic processes, as well as self-assembly processes (block copolymer, colloidal particles) are used for the fabrication of such features. Here, we demonstrate an assembly-organization method to both create the nanodot pattern on any non-specialty commercial polymer, and then transfer it to the subsequent silicon substrate [1,2]. First we perform a simple, fast, low ion-energy oxygen plasma etching step in a helicon plasma source. This creates polymer nanodots on the polymer film, due to simultaneous co-deposition of etch inhibitors from the reactor walls. Pattern transfer of the polymer nanodots on silicon has been subsequently performed by either SF6/O2 based high-density plasma at cryogenic temperatures, or a gas mixture of SF6, C4F8 and O2 at room temperature, leading to the fabrication of high aspect ratio silicon nanopillars. Possible applications are discussed.

AB - Periodic, well-defined, features in the nano-scale (dots, pillars, pores etc) are essential in several science and technology fields (photonics, hard disk drives, catalysis, biology). Top-down nano-lithographic processes, as well as self-assembly processes (block copolymer, colloidal particles) are used for the fabrication of such features. Here, we demonstrate an assembly-organization method to both create the nanodot pattern on any non-specialty commercial polymer, and then transfer it to the subsequent silicon substrate [1,2]. First we perform a simple, fast, low ion-energy oxygen plasma etching step in a helicon plasma source. This creates polymer nanodots on the polymer film, due to simultaneous co-deposition of etch inhibitors from the reactor walls. Pattern transfer of the polymer nanodots on silicon has been subsequently performed by either SF6/O2 based high-density plasma at cryogenic temperatures, or a gas mixture of SF6, C4F8 and O2 at room temperature, leading to the fabrication of high aspect ratio silicon nanopillars. Possible applications are discussed.

UR - https://meetings.aps.org/Meeting/GEC10/Session/MR1.2

M3 - Meeting abstract

SN - 0003-0503

VL - 55

JO - Bulletin of the American Physical Society

JF - Bulletin of the American Physical Society

IS - 7

M1 - MR1.00002

Y2 - 4 October 2010 through 8 October 2010

ER -