Pre-formed J-V and C-V characteristics of a-Si:H p+ ni junctions

W. K. Choi, S. Reynolds, J. Hajto, S. M. Gage, A. E. Owen, A. J. Snell, J. M. Flanagan, M. J. Rose, F. J. Djamdji, P. G. Lecomber, W. E. Spear

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    Static and dynamic J-V, and static C-V characteristics of a-Si:H p+ ni structures in the unformed state are presented and discussed. Certain aspects of their behaviour may be qualitatively explained in terms of models developed for analogous crystalline semiconductor structures when differences in their electronic and structural properties are taken into account.

    Original languageEnglish
    Pages (from-to)1331-1334
    Number of pages4
    JournalJournal of Non-Crystalline Solids
    Issue number2
    Publication statusPublished - 1987


    Cite this

    Choi, W. K., Reynolds, S., Hajto, J., Gage, S. M., Owen, A. E., Snell, A. J., Flanagan, J. M., Rose, M. J., Djamdji, F. J., Lecomber, P. G., & Spear, W. E. (1987). Pre-formed J-V and C-V characteristics of a-Si:H p+ ni junctions. Journal of Non-Crystalline Solids, 97-8(2), 1331-1334.