Abstract
Static and dynamic J-V, and static C-V characteristics of a-Si:H p+ ni structures in the unformed state are presented and discussed. Certain aspects of their behaviour may be qualitatively explained in terms of models developed for analogous crystalline semiconductor structures when differences in their electronic and structural properties are taken into account.
Original language | English |
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Pages (from-to) | 1331-1334 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 97-8 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1987 |