Pre-formed J-V and C-V characteristics of a-Si:H p+ ni junctions

W. K. Choi; S. Reynolds; J. Hajto; S. M. Gage; A. E. Owen; A. J. Snell; J. M. Flanagan; M. J. Rose; F. J. Djamdji; P. G. Lecomber; W. E. Spear

doi:10.1016/0022-3093(87)90319-X

Pre-formed J-V and C-V characteristics of a-Si:H p⁺ ni junctions

W. K. Choi
, S. Reynolds
, J. Hajto
, S. M. Gage
, A. E. Owen
, A. J. Snell
, J. M. Flanagan
, M. J. Rose
, F. J. Djamdji
, P. G. Lecomber
, W. E. Spear

Research output: Contribution to journal › Article › peer-review

Abstract

Static and dynamic J-V, and static C-V characteristics of a-Si:H p⁺ ni structures in the unformed state are presented and discussed. Certain aspects of their behaviour may be qualitatively explained in terms of models developed for analogous crystalline semiconductor structures when differences in their electronic and structural properties are taken into account.

Original language	English
Pages (from-to)	1331-1334
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	97-8
Issue number	2
DOIs	https://doi.org/10.1016/0022-3093(87)90319-X
Publication status	Published - 1987

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10.1016/0022-3093(87)90319-X

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@article{b13fecb55c384d32ab363a8206f824e2,

title = "Pre-formed J-V and C-V characteristics of a-Si:H p+ ni junctions",

abstract = "Static and dynamic J-V, and static C-V characteristics of a-Si:H p+ ni structures in the unformed state are presented and discussed. Certain aspects of their behaviour may be qualitatively explained in terms of models developed for analogous crystalline semiconductor structures when differences in their electronic and structural properties are taken into account.",

author = "Choi, \{W. K.\} and S. Reynolds and J. Hajto and Gage, \{S. M.\} and Owen, \{A. E.\} and Snell, \{A. J.\} and Flanagan, \{J. M.\} and Rose, \{M. J.\} and Djamdji, \{F. J.\} and Lecomber, \{P. G.\} and Spear, \{W. E.\}",

year = "1987",

doi = "10.1016/0022-3093(87)90319-X",

language = "English",

volume = "97-8",

pages = "1331--1334",

journal = "Journal of Non-Crystalline Solids",

issn = "1873-4812",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Pre-formed J-V and C-V characteristics of a-Si:H p+ ni junctions

AU - Choi, W. K.

AU - Reynolds, S.

AU - Hajto, J.

AU - Gage, S. M.

AU - Owen, A. E.

AU - Snell, A. J.

AU - Flanagan, J. M.

AU - Rose, M. J.

AU - Djamdji, F. J.

AU - Lecomber, P. G.

AU - Spear, W. E.

PY - 1987

Y1 - 1987

N2 - Static and dynamic J-V, and static C-V characteristics of a-Si:H p+ ni structures in the unformed state are presented and discussed. Certain aspects of their behaviour may be qualitatively explained in terms of models developed for analogous crystalline semiconductor structures when differences in their electronic and structural properties are taken into account.

AB - Static and dynamic J-V, and static C-V characteristics of a-Si:H p+ ni structures in the unformed state are presented and discussed. Certain aspects of their behaviour may be qualitatively explained in terms of models developed for analogous crystalline semiconductor structures when differences in their electronic and structural properties are taken into account.

U2 - 10.1016/0022-3093(87)90319-X

DO - 10.1016/0022-3093(87)90319-X

M3 - Article

SN - 1873-4812

VL - 97-8

SP - 1331

EP - 1334

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 2

ER -

Pre-formed J-V and C-V characteristics of a-Si:H p+ ni junctions

Abstract

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Pre-formed J-V and C-V characteristics of a-Si:H p⁺ ni junctions