Quantum Dot Based Semiconductor Disk Lasers for 1-1.3 mu m

M. Butkus, Jussi Rautiainen, Oleg G. Okhotnikov, Craig J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, Igor L. Krestnikov, D. A. Livshits, Edik U. Rafailov

    Research output: Contribution to journalArticlepeer-review

    29 Citations (Scopus)

    Abstract

    Optically pumped quantum dot (QD)-based semiconductor disk lasers (SDLs) have been under intense research after their first demonstration and important enhancements of their parameters have been achieved since then. In this paper, we present recent developments in QD-based SDLs emitting in the 1-1.3 mu m spectral region. Three different wavelength ranges of 1040, 1180, and 1260 nm were explored. Power scaling up to 6 W was achieved for 1040 and 1180 nm devices and up to 1.6 W for 1260 nm device. New spectral regions were covered by direct emission and frequency doubling was used to demonstrate spectral conversion into visible region with green, orange, and red light. Also, the broad gain bandwidth of QD materials was explored and wavelength tuneability up to 60 nm around 1040 nm, 69 nm around 1180 nm, and 25 nm around 1260 nm was demonstrated. The efficiency of excited and ground state emission in QDs was also compared. All these improvements allow new possibilities in applications of QD SDLs, reveal their potential, and suggest the aims for future research in the field.

    Original languageEnglish
    Pages (from-to)1763-1771
    Number of pages9
    JournalIEEE Journal of Selected Topics in Quantum Electronics
    Volume17
    Issue number6
    DOIs
    Publication statusPublished - 2011

    Keywords

    • Continuous wave (CW)
    • infrared (IR)
    • quantum dots (QDs)
    • semiconductor disk lasers (SDLs)
    • CAVITY
    • POWER
    • EMISSION
    • MODE
    • NM
    • ISLANDS
    • VECSEL
    • GROWTH
    • GAAS

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