Quantum well saturable absorber mirror with electrical control of modulation depth

Xiaomin Liu; Edik U. Rafailov; Daniil Livshits; Dmitry Turchinovich

doi:10.1063/1.3474799

Quantum well saturable absorber mirror with electrical control of modulation depth

Xiaomin Liu, Edik U. Rafailov, Daniil Livshits, Dmitry Turchinovich

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0-2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5-0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6-26.7 mu J/cm(2). This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474799]

Original language	English
Article number	051103
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	5
DOIs	https://doi.org/10.1063/1.3474799
Publication status	Published - 2 Aug 2010

Keywords

SOLID-STATE LASERS
FIBER
TI

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10.1063/1.3474799

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title = "Quantum well saturable absorber mirror with electrical control of modulation depth",

abstract = "We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0-2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5-0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6-26.7 mu J/cm(2). This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474799]",

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T1 - Quantum well saturable absorber mirror with electrical control of modulation depth

AU - Liu, Xiaomin

AU - Rafailov, Edik U.

AU - Livshits, Daniil

AU - Turchinovich, Dmitry

PY - 2010/8/2

Y1 - 2010/8/2

N2 - We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0-2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5-0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6-26.7 mu J/cm(2). This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474799]

AB - We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0-2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5-0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6-26.7 mu J/cm(2). This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474799]

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DO - 10.1063/1.3474799

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Quantum well saturable absorber mirror with electrical control of modulation depth

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