Quantum well saturable absorber mirror with electrical control of modulation depth

TY - JOUR

T1 - Quantum well saturable absorber mirror with electrical control of modulation depth

AU - Liu, Xiaomin

AU - Rafailov, Edik U.

AU - Livshits, Daniil

AU - Turchinovich, Dmitry

PY - 2010/8/2

Y1 - 2010/8/2

N2 - We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0-2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5-0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6-26.7 mu J/cm(2). This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474799]

AB - We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0-2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5-0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6-26.7 mu J/cm(2). This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474799]

KW - SOLID-STATE LASERS

KW - FIBER

KW - TI

U2 - 10.1063/1.3474799

DO - 10.1063/1.3474799

M3 - Article

SN - 0003-6951

VL - 97

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051103

ER -