Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm

L. Kong, H. L. Wang, D. Bajek, S. E. Haggett, A. F. Forrest, X. L. Wang, B. F. Cui, J. Q. Pan, A. Y. Ding, M. A. Cataluna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.

Original languageEnglish
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
PublisherInstitute of Electrical and Electronics Engineers
Pages137-138
Number of pages2
ISBN (Print)9781479957217
DOIs
Publication statusPublished - 16 Dec 2014
Event2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain
Duration: 7 Sep 201410 Sep 2014

Conference

Conference2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
CountrySpain
CityPalma de Mallorca
Period7/09/1410/09/14

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Kong, L., Wang, H. L., Bajek, D., Haggett, S. E., Forrest, A. F., Wang, X. L., Cui, B. F., Pan, J. Q., Ding, A. Y., & Cataluna, M. A. (2014). Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 137-138). [6987488] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ISLC.2014.201