Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm

L. Kong; H. L. Wang; D. Bajek; S. E. Haggett; A. F. Forrest; X. L. Wang; B. F. Cui; J. Q. Pan; A. Y. Ding; M. A. Cataluna

doi:10.1109/ISLC.2014.201

Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm

L. Kong, H. L. Wang, D. Bajek, S. E. Haggett, A. F. Forrest, X. L. Wang, B. F. Cui, J. Q. Pan, A. Y. Ding, M. A. Cataluna

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Publisher	IEEE
Pages	137-138
Number of pages	2
ISBN (Print)	9781479957217
DOIs	https://doi.org/10.1109/ISLC.2014.201
Publication status	Published - 18 Dec 2014
Event	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain Duration: 7 Sept 2014 → 10 Sept 2014

Publication series

Name
ISSN (Print)	0899-9406
ISSN (Electronic)	947-6981

Conference

Conference	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
Country/Territory	Spain
City	Palma de Mallorca
Period	7/09/14 → 10/09/14

Keywords

Semiconductor lasers
Laser mode locking
Fiber lasers
Optical pulses
Educational institutions
Opitcal pulse generation
Gallium arsenide

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/ISLC.2014.201

Cite this

Kong, L., Wang, H. L., Bajek, D., Haggett, S. E., Forrest, A. F., Wang, X. L., Cui, B. F., Pan, J. Q., Ding, A. Y., & Cataluna, M. A. (2014). Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 137-138). Article 6987488 IEEE. https://doi.org/10.1109/ISLC.2014.201

@inproceedings{d532d5e30f02466cb67901de6260b6bd,

title = "Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm",

abstract = "A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.",

keywords = "Semiconductor lasers, Laser mode locking, Fiber lasers, Optical pulses, Educational institutions, Opitcal pulse generation, Gallium arsenide",

author = "L. Kong and Wang, {H. L.} and D. Bajek and Haggett, {S. E.} and Forrest, {A. F.} and Wang, {X. L.} and Cui, {B. F.} and Pan, {J. Q.} and Ding, {A. Y.} and Cataluna, {M. A.}",

note = "Copyright: {\textcopyright} 2014 IEEE.; 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 ; Conference date: 07-09-2014 Through 10-09-2014",

year = "2014",

month = dec,

day = "18",

doi = "10.1109/ISLC.2014.201",

language = "English",

isbn = "9781479957217",

publisher = "IEEE",

pages = "137--138",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

}

Kong, L, Wang, HL, Bajek, D, Haggett, SE, Forrest, AF, Wang, XL, Cui, BF, Pan, JQ, Ding, AY & Cataluna, MA 2014, Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm. in Conference Digest - IEEE International Semiconductor Laser Conference., 6987488, IEEE, pp. 137-138, 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014, Palma de Mallorca, Spain, 7/09/14. https://doi.org/10.1109/ISLC.2014.201

TY - GEN

T1 - Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm

AU - Kong, L.

AU - Wang, H. L.

AU - Bajek, D.

AU - Haggett, S. E.

AU - Forrest, A. F.

AU - Wang, X. L.

AU - Cui, B. F.

AU - Pan, J. Q.

AU - Ding, A. Y.

AU - Cataluna, M. A.

PY - 2014/12/18

Y1 - 2014/12/18

N2 - A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.

AB - A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.

KW - Semiconductor lasers

KW - Laser mode locking

KW - Fiber lasers

KW - Optical pulses

KW - Educational institutions

KW - Opitcal pulse generation

KW - Gallium arsenide

UR - http://www.scopus.com/inward/record.url?scp=84920125836&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2014.201

DO - 10.1109/ISLC.2014.201

M3 - Conference contribution

AN - SCOPUS:84920125836

SN - 9781479957217

SP - 137

EP - 138

BT - Conference Digest - IEEE International Semiconductor Laser Conference

PB - IEEE

T2 - 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014

Y2 - 7 September 2014 through 10 September 2014

ER -

Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Development of versatile wavelength tunable external cavity quantum dot lasers

High-Speed Optical Sampling Techniques Enabled By Ultrafast Semiconductor Lasers

Novel Approaches to Power Scaling In Mode-Locked Laser Diode Based Ultrashort Pulse Sources

Cite this

Semiconductor monolithic mode-locked laser for ultrashort pulse generation at 750 nm

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Student theses

Development of versatile wavelength tunable external cavity quantum dot lasers

High-Speed Optical Sampling Techniques Enabled By Ultrafast Semiconductor Lasers

Novel Approaches to Power Scaling In Mode-Locked Laser Diode Based Ultrashort Pulse Sources

Cite this