TY - JOUR
T1 - Spatial and energetic profiling of defects in thin-film silicon
AU - Reynolds, S.
AU - Main, C.
AU - Bruggemann, R.
N1 - Special Issue containing Proceedings of the 12th International School on Condensed Matter Physics VARNA, BULGARIA, SEP 01-06, 2002
dc.description.sponsorship: British Council (ARC project 1185)
PY - 2003
Y1 - 2003
N2 - The calibration of the density of states (DOS) obtained from transient photocurrent (TPC) measurements on PECVD hydrogenated amorphous silicon (a-Si: H) over a wide temperature range is investigated. It is shown that by including a lumped empirical correction to the temperature dependence of parameters such as the free-carrier mobility and capture coefficient, somewhat improved consistency in the DOS calculations may be achieved. The onset of trap saturation is considered as a possible reference point for calibration. Significant differences in the TPC DOS in a-Si : H when using either red or green laser pulse excitations are reported, and are attributed to spatial variations in the defect distribution through the film. Metastable defects produced by exposure of one side of the film to strongly absorbed light are correlated with an increased DOS when probed with the green laser from the same side. (C) 2003 Kluwer Academic Publishers.
AB - The calibration of the density of states (DOS) obtained from transient photocurrent (TPC) measurements on PECVD hydrogenated amorphous silicon (a-Si: H) over a wide temperature range is investigated. It is shown that by including a lumped empirical correction to the temperature dependence of parameters such as the free-carrier mobility and capture coefficient, somewhat improved consistency in the DOS calculations may be achieved. The onset of trap saturation is considered as a possible reference point for calibration. Significant differences in the TPC DOS in a-Si : H when using either red or green laser pulse excitations are reported, and are attributed to spatial variations in the defect distribution through the film. Metastable defects produced by exposure of one side of the film to strongly absorbed light are correlated with an increased DOS when probed with the green laser from the same side. (C) 2003 Kluwer Academic Publishers.
KW - Hydrogenated amorphous silicon
KW - Transient photoconductivity
KW - Density of states (DOS)
KW - DOS
U2 - 10.1023/A:1026133827111
DO - 10.1023/A:1026133827111
M3 - Special issue
SN - 0957-4522
VL - 44
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 10-12
T2 - 12th International School on Condensed Matter Physics
Y2 - 1 September 2002 through 6 September 2002
ER -