Spatial and energetic profiling of defects in thin-film silicon

S. Reynolds, C. Main, R. Bruggemann

    Research output: Contribution to journalSpecial issue

    2 Citations (Scopus)

    Abstract

    The calibration of the density of states (DOS) obtained from transient photocurrent (TPC) measurements on PECVD hydrogenated amorphous silicon (a-Si: H) over a wide temperature range is investigated. It is shown that by including a lumped empirical correction to the temperature dependence of parameters such as the free-carrier mobility and capture coefficient, somewhat improved consistency in the DOS calculations may be achieved. The onset of trap saturation is considered as a possible reference point for calibration. Significant differences in the TPC DOS in a-Si : H when using either red or green laser pulse excitations are reported, and are attributed to spatial variations in the defect distribution through the film. Metastable defects produced by exposure of one side of the film to strongly absorbed light are correlated with an increased DOS when probed with the green laser from the same side. (C) 2003 Kluwer Academic Publishers.
    Original languageEnglish
    JournalJournal of Materials Science: Materials in Electronics
    Volume44
    Issue number10-12
    DOIs
    Publication statusPublished - 2003
    Event12th International School on Condensed Matter Physics - Varna, Bulgaria
    Duration: 1 Sep 20026 Sep 2002

    Fingerprint

    Silicon
    Photocurrents
    Calibration
    Thin films
    Defects
    Carrier mobility
    defects
    silicon
    Plasma enhanced chemical vapor deposition
    thin films
    Amorphous silicon
    photocurrents
    Laser pulses
    Temperature
    Lasers
    carrier mobility
    amorphous silicon
    lasers
    traps
    saturation

    Keywords

    • Hydrogenated amorphous silicon
    • Transient photoconductivity
    • Density of states (DOS)
    • DOS

    Cite this

    @article{45e10afd80ab488281ea45f978d48864,
    title = "Spatial and energetic profiling of defects in thin-film silicon",
    abstract = "The calibration of the density of states (DOS) obtained from transient photocurrent (TPC) measurements on PECVD hydrogenated amorphous silicon (a-Si: H) over a wide temperature range is investigated. It is shown that by including a lumped empirical correction to the temperature dependence of parameters such as the free-carrier mobility and capture coefficient, somewhat improved consistency in the DOS calculations may be achieved. The onset of trap saturation is considered as a possible reference point for calibration. Significant differences in the TPC DOS in a-Si : H when using either red or green laser pulse excitations are reported, and are attributed to spatial variations in the defect distribution through the film. Metastable defects produced by exposure of one side of the film to strongly absorbed light are correlated with an increased DOS when probed with the green laser from the same side. (C) 2003 Kluwer Academic Publishers.",
    keywords = "Hydrogenated amorphous silicon, Transient photoconductivity, Density of states (DOS), DOS",
    author = "S. Reynolds and C. Main and R. Bruggemann",
    note = "Special Issue containing Proceedings of the 12th International School on Condensed Matter Physics VARNA, BULGARIA, SEP 01-06, 2002 dc.description.sponsorship: British Council (ARC project 1185)",
    year = "2003",
    doi = "10.1023/A:1026133827111",
    language = "English",
    volume = "44",
    journal = "Journal of Materials Science: Materials in Electronics",
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    publisher = "Springer Verlag",
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    Spatial and energetic profiling of defects in thin-film silicon. / Reynolds, S.; Main, C.; Bruggemann, R.

    In: Journal of Materials Science: Materials in Electronics, Vol. 44, No. 10-12, 2003.

    Research output: Contribution to journalSpecial issue

    TY - JOUR

    T1 - Spatial and energetic profiling of defects in thin-film silicon

    AU - Reynolds, S.

    AU - Main, C.

    AU - Bruggemann, R.

    N1 - Special Issue containing Proceedings of the 12th International School on Condensed Matter Physics VARNA, BULGARIA, SEP 01-06, 2002 dc.description.sponsorship: British Council (ARC project 1185)

    PY - 2003

    Y1 - 2003

    N2 - The calibration of the density of states (DOS) obtained from transient photocurrent (TPC) measurements on PECVD hydrogenated amorphous silicon (a-Si: H) over a wide temperature range is investigated. It is shown that by including a lumped empirical correction to the temperature dependence of parameters such as the free-carrier mobility and capture coefficient, somewhat improved consistency in the DOS calculations may be achieved. The onset of trap saturation is considered as a possible reference point for calibration. Significant differences in the TPC DOS in a-Si : H when using either red or green laser pulse excitations are reported, and are attributed to spatial variations in the defect distribution through the film. Metastable defects produced by exposure of one side of the film to strongly absorbed light are correlated with an increased DOS when probed with the green laser from the same side. (C) 2003 Kluwer Academic Publishers.

    AB - The calibration of the density of states (DOS) obtained from transient photocurrent (TPC) measurements on PECVD hydrogenated amorphous silicon (a-Si: H) over a wide temperature range is investigated. It is shown that by including a lumped empirical correction to the temperature dependence of parameters such as the free-carrier mobility and capture coefficient, somewhat improved consistency in the DOS calculations may be achieved. The onset of trap saturation is considered as a possible reference point for calibration. Significant differences in the TPC DOS in a-Si : H when using either red or green laser pulse excitations are reported, and are attributed to spatial variations in the defect distribution through the film. Metastable defects produced by exposure of one side of the film to strongly absorbed light are correlated with an increased DOS when probed with the green laser from the same side. (C) 2003 Kluwer Academic Publishers.

    KW - Hydrogenated amorphous silicon

    KW - Transient photoconductivity

    KW - Density of states (DOS)

    KW - DOS

    U2 - 10.1023/A:1026133827111

    DO - 10.1023/A:1026133827111

    M3 - Special issue

    VL - 44

    JO - Journal of Materials Science: Materials in Electronics

    JF - Journal of Materials Science: Materials in Electronics

    SN - 0957-4522

    IS - 10-12

    ER -