Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser

Sjoerd Hoogland, Arnaud Garnache, Keith G. Wilcox, Zakaria Mihoubi, Stephen Elsmere, Adrian Quarterman, Anne Tropper

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.

    Original languageEnglish
    Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
    DOIs
    Publication statusPublished - 15 Sep 2008
    EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008: Bringing Together the World's Foremost Optics and Photonics Leaders - San Jose Convention Center, San Jose, CA, United States
    Duration: 4 May 20089 May 2008
    https://www.cleoconference.org/home/about-cleo/archive/ (Link to conference information)

    Publication series

    Name2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

    Conference

    ConferenceConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
    Abbreviated titleCLEO/QELS 2008
    CountryUnited States
    CitySan Jose, CA
    Period4/05/089/05/08
    Internet address

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