Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser

Sjoerd Hoogland; Arnaud Garnache; Keith G. Wilcox; Zakaria Mihoubi; Stephen Elsmere; Adrian Quarterman; Anne Tropper

doi:10.1109/CLEO.2008.4551843

Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser

Sjoerd Hoogland
, Arnaud Garnache
, Keith G. Wilcox
, Zakaria Mihoubi
, Stephen Elsmere
, Adrian Quarterman
, Anne Tropper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.

Original language	English
Title of host publication	2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs	https://doi.org/10.1109/CLEO.2008.4551843
Publication status	Published - 15 Sept 2008
Event	Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008: Bringing Together the World's Foremost Optics and Photonics Leaders - San Jose Convention Center, San Jose, CA, United States Duration: 4 May 2008 → 9 May 2008 https://www.cleoconference.org/home/about-cleo/archive/ (Link to conference information)

Publication series

Name	2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Conference

Conference	Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
Abbreviated title	CLEO/QELS 2008
Country/Territory	United States
City	San Jose, CA
Period	4/05/08 → 9/05/08
Internet address	https://www.cleoconference.org/home/about-cleo/archive/ (Link to conference information)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/CLEO.2008.4551843

Cite this

Hoogland, S., Garnache, A., Wilcox, K. G., Mihoubi, Z., Elsmere, S., Quarterman, A., & Tropper, A. (2008). Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser. In 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS Article 4551843 (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS). https://doi.org/10.1109/CLEO.2008.4551843

Hoogland, Sjoerd ; Garnache, Arnaud ; Wilcox, Keith G. et al. / Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser. 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS. 2008. (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS).

@inproceedings{890b8819abb34bc89b23875c8b92fb69,

title = "Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser",

abstract = "Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.",

author = "Sjoerd Hoogland and Arnaud Garnache and Wilcox, \{Keith G.\} and Zakaria Mihoubi and Stephen Elsmere and Adrian Quarterman and Anne Tropper",

year = "2008",

month = sep,

day = "15",

doi = "10.1109/CLEO.2008.4551843",

language = "English",

isbn = "9781557528599",

series = "2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS",

booktitle = "2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS",

note = "Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 : Bringing Together the World's Foremost Optics and Photonics Leaders, CLEO/QELS 2008 ; Conference date: 04-05-2008 Through 09-05-2008",

url = "https://www.cleoconference.org/home/about-cleo/archive/",

}

Hoogland, S, Garnache, A, Wilcox, KG, Mihoubi, Z, Elsmere, S, Quarterman, A & Tropper, A 2008, Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser. in 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS., 4551843, 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS, Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008, San Jose, CA, California, United States, 4/05/08. https://doi.org/10.1109/CLEO.2008.4551843

Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser. / Hoogland, Sjoerd; Garnache, Arnaud; Wilcox, Keith G. et al.
2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS. 2008. 4551843 (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser

AU - Hoogland, Sjoerd

AU - Garnache, Arnaud

AU - Wilcox, Keith G.

AU - Mihoubi, Zakaria

AU - Elsmere, Stephen

AU - Quarterman, Adrian

AU - Tropper, Anne

PY - 2008/9/15

Y1 - 2008/9/15

N2 - Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.

AB - Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.

UR - https://www.scopus.com/pages/publications/51349100823

U2 - 10.1109/CLEO.2008.4551843

DO - 10.1109/CLEO.2008.4551843

M3 - Conference contribution

AN - SCOPUS:51349100823

SN - 9781557528599

T3 - 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

BT - 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

T2 - Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008

Y2 - 4 May 2008 through 9 May 2008

ER -

Hoogland S, Garnache A, Wilcox KG, Mihoubi Z, Elsmere S, Quarterman A et al. Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser. In 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS. 2008. 4551843. (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS). doi: 10.1109/CLEO.2008.4551843

Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser

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