Structure of the band tails in amorphous selenium

M. L. Benkhedir, M. Brinza, G. J. Adriaenssens, C. Main

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    Abstract

    Transient photocurrent measurements on evaporated a-Se layers indicate the presence of two sets of discrete traps in the band tail region. The shallower traps, at E-V + 0.20 eV and E-C - 0.28 eV, are found to be electrically neutral, while the deeper ones at E-V + 0.38 eV and E-C - 0.53 eV are related to the charged negative-U centres of a-Se. The density of the discrete traps is of the same order of magnitude as the disorder-induced background density in the valence and conduction band tails, preventing the characterization of the a-Se tail-state densities by a simple functional form.

    Original languageEnglish
    Article number215202
    Pages (from-to)-
    Number of pages4
    JournalJournal of Physics: Condensed Matter
    Volume20
    Issue number21
    DOIs
    Publication statusPublished - 28 May 2008

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