Abstract
Transient photocurrent measurements on evaporated a-Se layers indicate the presence of two sets of discrete traps in the band tail region. The shallower traps, at E-V + 0.20 eV and E-C - 0.28 eV, are found to be electrically neutral, while the deeper ones at E-V + 0.38 eV and E-C - 0.53 eV are related to the charged negative-U centres of a-Se. The density of the discrete traps is of the same order of magnitude as the disorder-induced background density in the valence and conduction band tails, preventing the characterization of the a-Se tail-state densities by a simple functional form.
| Original language | English |
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| Article number | 215202 |
| Pages (from-to) | - |
| Number of pages | 4 |
| Journal | Journal of Physics: Condensed Matter |
| Volume | 20 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 28 May 2008 |