Structure-related strain and stress in thin hydrogenated microcrystalline silicon films

K. Christova; S. Alexandrova; A. Abramov; E. Valcheva; B. Ranguelov; C. Longeaud; S. Reynolds; P. Roca I Cabarrocas

doi:10.1088/1742-6596/253/1/012056

Structure-related strain and stress in thin hydrogenated microcrystalline silicon films

K. Christova, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, C. Longeaud, S. Reynolds, P. Roca I Cabarrocas

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

The stress/strain relation for hydrogenated microcrystalline silicon (μc-Si:H) films in the thickness range 10 to 200 nm was studied. It was found from wafer curvature measurements that all deposited films exhibit compressive intrinsic stress, which decreases with film thickness. This finding is in agreement with the stress level seen from the shifts in Raman spectra. The strain was approached through the Raman Mechanical Coefficient for the thin films and was estimated to be -1.4×10^-5 (cm^-1/MPa). The Raman spectra indicated highly crystalline films. The deconvolution of the spectra into Lorentzian components revealed inclusion of defective nanocrystallites and amorphous phase as well. The fractions of the different constituents were estimated. The contribution of the defective nanocrystallites to the overall stress in the films has been interpreted.

Original language	English
Article number	012056
Number of pages	9
Journal	Journal of Physics: Conference Series
Volume	253
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/253/1/012056
Publication status	Published - 2010
Event	Progress in Solid State and Molecular Electronics, Ionics and Photonics, 16 ISCMP - Varna, Bulgaria Duration: 29 Aug 2010 → 3 Sept 2010

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/1742-6596/253/1/012056

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title = "Structure-related strain and stress in thin hydrogenated microcrystalline silicon films",

abstract = "The stress/strain relation for hydrogenated microcrystalline silicon (μc-Si:H) films in the thickness range 10 to 200 nm was studied. It was found from wafer curvature measurements that all deposited films exhibit compressive intrinsic stress, which decreases with film thickness. This finding is in agreement with the stress level seen from the shifts in Raman spectra. The strain was approached through the Raman Mechanical Coefficient for the thin films and was estimated to be -1.4×10-5 (cm-1/MPa). The Raman spectra indicated highly crystalline films. The deconvolution of the spectra into Lorentzian components revealed inclusion of defective nanocrystallites and amorphous phase as well. The fractions of the different constituents were estimated. The contribution of the defective nanocrystallites to the overall stress in the films has been interpreted.",

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T1 - Structure-related strain and stress in thin hydrogenated microcrystalline silicon films

AU - Christova, K.

AU - Alexandrova, S.

AU - Abramov, A.

AU - Valcheva, E.

AU - Ranguelov, B.

AU - Longeaud, C.

AU - Reynolds, S.

AU - Roca I Cabarrocas, P.

PY - 2010

Y1 - 2010

N2 - The stress/strain relation for hydrogenated microcrystalline silicon (μc-Si:H) films in the thickness range 10 to 200 nm was studied. It was found from wafer curvature measurements that all deposited films exhibit compressive intrinsic stress, which decreases with film thickness. This finding is in agreement with the stress level seen from the shifts in Raman spectra. The strain was approached through the Raman Mechanical Coefficient for the thin films and was estimated to be -1.4×10-5 (cm-1/MPa). The Raman spectra indicated highly crystalline films. The deconvolution of the spectra into Lorentzian components revealed inclusion of defective nanocrystallites and amorphous phase as well. The fractions of the different constituents were estimated. The contribution of the defective nanocrystallites to the overall stress in the films has been interpreted.

AB - The stress/strain relation for hydrogenated microcrystalline silicon (μc-Si:H) films in the thickness range 10 to 200 nm was studied. It was found from wafer curvature measurements that all deposited films exhibit compressive intrinsic stress, which decreases with film thickness. This finding is in agreement with the stress level seen from the shifts in Raman spectra. The strain was approached through the Raman Mechanical Coefficient for the thin films and was estimated to be -1.4×10-5 (cm-1/MPa). The Raman spectra indicated highly crystalline films. The deconvolution of the spectra into Lorentzian components revealed inclusion of defective nanocrystallites and amorphous phase as well. The fractions of the different constituents were estimated. The contribution of the defective nanocrystallites to the overall stress in the films has been interpreted.

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DO - 10.1088/1742-6596/253/1/012056

M3 - Conference article

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SN - 1742-6588

VL - 253

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

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T2 - Progress in Solid State and Molecular Electronics, Ionics and Photonics, 16 ISCMP

Y2 - 29 August 2010 through 3 September 2010

ER -

Structure-related strain and stress in thin hydrogenated microcrystalline silicon films

Abstract

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