Structure-related strain and stress in thin hydrogenated microcrystalline silicon films

K. Christova, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, C. Longeaud, S. Reynolds, P. Roca I Cabarrocas

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The stress/strain relation for hydrogenated microcrystalline silicon (μc-Si:H) films in the thickness range 10 to 200 nm was studied. It was found from wafer curvature measurements that all deposited films exhibit compressive intrinsic stress, which decreases with film thickness. This finding is in agreement with the stress level seen from the shifts in Raman spectra. The strain was approached through the Raman Mechanical Coefficient for the thin films and was estimated to be -1.4×10-5 (cm-1/MPa). The Raman spectra indicated highly crystalline films. The deconvolution of the spectra into Lorentzian components revealed inclusion of defective nanocrystallites and amorphous phase as well. The fractions of the different constituents were estimated. The contribution of the defective nanocrystallites to the overall stress in the films has been interpreted.

Original languageEnglish
Article number012056
Number of pages9
JournalJournal of Physics: Conference Series
Volume253
Issue number1
DOIs
Publication statusPublished - 2010
EventProgress in Solid State and Molecular Electronics, Ionics and Photonics, 16 ISCMP - Varna, Bulgaria
Duration: 29 Aug 20103 Sep 2010

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silicon films
Raman spectra
film thickness
curvature
wafers
inclusions
shift
silicon
coefficients
thin films

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Christova, K., Alexandrova, S., Abramov, A., Valcheva, E., Ranguelov, B., Longeaud, C., ... Roca I Cabarrocas, P. (2010). Structure-related strain and stress in thin hydrogenated microcrystalline silicon films. Journal of Physics: Conference Series, 253(1), [012056]. https://doi.org/10.1088/1742-6596/253/1/012056
Christova, K. ; Alexandrova, S. ; Abramov, A. ; Valcheva, E. ; Ranguelov, B. ; Longeaud, C. ; Reynolds, S. ; Roca I Cabarrocas, P. / Structure-related strain and stress in thin hydrogenated microcrystalline silicon films. In: Journal of Physics: Conference Series. 2010 ; Vol. 253, No. 1.
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abstract = "The stress/strain relation for hydrogenated microcrystalline silicon (μc-Si:H) films in the thickness range 10 to 200 nm was studied. It was found from wafer curvature measurements that all deposited films exhibit compressive intrinsic stress, which decreases with film thickness. This finding is in agreement with the stress level seen from the shifts in Raman spectra. The strain was approached through the Raman Mechanical Coefficient for the thin films and was estimated to be -1.4×10-5 (cm-1/MPa). The Raman spectra indicated highly crystalline films. The deconvolution of the spectra into Lorentzian components revealed inclusion of defective nanocrystallites and amorphous phase as well. The fractions of the different constituents were estimated. The contribution of the defective nanocrystallites to the overall stress in the films has been interpreted.",
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Christova, K, Alexandrova, S, Abramov, A, Valcheva, E, Ranguelov, B, Longeaud, C, Reynolds, S & Roca I Cabarrocas, P 2010, 'Structure-related strain and stress in thin hydrogenated microcrystalline silicon films', Journal of Physics: Conference Series, vol. 253, no. 1, 012056. https://doi.org/10.1088/1742-6596/253/1/012056

Structure-related strain and stress in thin hydrogenated microcrystalline silicon films. / Christova, K.; Alexandrova, S.; Abramov, A.; Valcheva, E.; Ranguelov, B.; Longeaud, C.; Reynolds, S.; Roca I Cabarrocas, P.

In: Journal of Physics: Conference Series, Vol. 253, No. 1, 012056, 2010.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Structure-related strain and stress in thin hydrogenated microcrystalline silicon films

AU - Christova, K.

AU - Alexandrova, S.

AU - Abramov, A.

AU - Valcheva, E.

AU - Ranguelov, B.

AU - Longeaud, C.

AU - Reynolds, S.

AU - Roca I Cabarrocas, P.

PY - 2010

Y1 - 2010

N2 - The stress/strain relation for hydrogenated microcrystalline silicon (μc-Si:H) films in the thickness range 10 to 200 nm was studied. It was found from wafer curvature measurements that all deposited films exhibit compressive intrinsic stress, which decreases with film thickness. This finding is in agreement with the stress level seen from the shifts in Raman spectra. The strain was approached through the Raman Mechanical Coefficient for the thin films and was estimated to be -1.4×10-5 (cm-1/MPa). The Raman spectra indicated highly crystalline films. The deconvolution of the spectra into Lorentzian components revealed inclusion of defective nanocrystallites and amorphous phase as well. The fractions of the different constituents were estimated. The contribution of the defective nanocrystallites to the overall stress in the films has been interpreted.

AB - The stress/strain relation for hydrogenated microcrystalline silicon (μc-Si:H) films in the thickness range 10 to 200 nm was studied. It was found from wafer curvature measurements that all deposited films exhibit compressive intrinsic stress, which decreases with film thickness. This finding is in agreement with the stress level seen from the shifts in Raman spectra. The strain was approached through the Raman Mechanical Coefficient for the thin films and was estimated to be -1.4×10-5 (cm-1/MPa). The Raman spectra indicated highly crystalline films. The deconvolution of the spectra into Lorentzian components revealed inclusion of defective nanocrystallites and amorphous phase as well. The fractions of the different constituents were estimated. The contribution of the defective nanocrystallites to the overall stress in the films has been interpreted.

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