Study of electron-irradiated silicon thin films using transient photocurrent spectroscopy

S. Reynolds (Lead / Corresponding author), O. Astakhov, V. Smirnov

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    Abstract

    Electron irradiation of silicon thin films creates localised states, which degrade their opto-electronic properties. We present a series of transient photocurrent spectroscopy (TPC) measurements on electron-irradiated amorphous and microcrystalline silicon films, annealed at progressively increasing temperatures. This has enabled localised states associated with both dangling bonds and conduction band tails to be examined over a wide energy range. Trends in the evolution of the DOS following electron irradiation followed by isochronal annealing steps indicate reductions in the deep defect density, which correlate with spin density. We also find a steepening of the conduction band tail slope in amorphous silicon on annealing. Both defect density and tail slope may be restored close to as-prepared material values. Earlier CPM data are re-examined, and a similar trend in the valence band tail slope is indicated. Computer simulations predict that following e-irradiation changes in deep defect density primarily control solar cell performance, and will tend to obscure effects related to band tails.
    Original languageEnglish
    Article number 012001
    Number of pages10
    JournalJournal of Physics: Conference Series
    Volume558
    Issue number1
    DOIs
    Publication statusPublished - 2014
    Event18th International School of Condensed Matter Physics - Varna, Bulgaria
    Duration: 1 Sep 20146 Sep 2014

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