Sublinear photoconductivity in n-type a-Si:H: analysis and computer modelling

TY - JOUR

T1 - Sublinear photoconductivity in n-type a-Si:H

T2 - analysis and computer modelling

AU - Main, C.

AU - Dick, F.

AU - Reynolds, S.

AU - Gao, W.

AU - Gibson, R. A. G.

PY - 1996

Y1 - 1996

N2 - In this paper an approach is suggested to examine photoconductivity in n-type a-Si:H, in which band tails are required to play an important role as reservoirs of trapped charge but do not provide a significant recombination path. The model arises from observations of steady state photoconductivity in n-type a-Si:H which reveal sublinear behaviour of photocurrent dI extending several orders of magnitude below the ‘dark’ current IO. This is unexpected behaviour, since most models predict linearity for small-signal conditions. Computer simulations using the suggested model reproduce this behaviour and also fit the observed temperature dependence of the index, ?.

AB - In this paper an approach is suggested to examine photoconductivity in n-type a-Si:H, in which band tails are required to play an important role as reservoirs of trapped charge but do not provide a significant recombination path. The model arises from observations of steady state photoconductivity in n-type a-Si:H which reveal sublinear behaviour of photocurrent dI extending several orders of magnitude below the ‘dark’ current IO. This is unexpected behaviour, since most models predict linearity for small-signal conditions. Computer simulations using the suggested model reproduce this behaviour and also fit the observed temperature dependence of the index, ?.

U2 - 10.1016/0022-3093(95)00710-5

DO - 10.1016/0022-3093(95)00710-5

M3 - Article

SN - 1873-4812

VL - 200

SP - 263

EP - 266

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -