Super sequential lateral growth of Nd:YAG laser crystallized hydrogenated amorphous silicon

Y. F. Tang, S. R. P. Silva, M. J. Rose

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    Lateral growth crystallization of hydrogenated amorphous silicon with single and multiple pulse excitation using a Nd:YAG laser at a wavelength of 532 nm and a 3 ns pulse width at a repetition of 10 Hz is shown. With single pulse crystallization, large grain sizes of the order of 1 µm were obtained with an energy density >400 mJ/cm2, and these have been studied using transmission electron microscopy (TEM) and atomic force microscopy. We show that, by using extremely short (3 ns) multiple pulse excitation of significantly lower powers (<150 mJ/cm2), than that used to crystallize amorphous silicon with single pulse excitation, a uniform growth of crystalline grains is observed. TEM gives evidence for lateral grain growth with multiple pulse crystallization at low energies. We suggest that a "super sequential lateral growth" mechanism is occurring. © 2001 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)186-188
    Number of pages3
    JournalApplied Physics Letters
    Issue number2
    Publication statusPublished - Jan 2001


    • Thin-film transistors
    • Interference crystallization
    • Polycrystalline silicon
    • Grain-growth
    • SI films
    • A-SI
    • Glass


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