Suppression of vacancy defects in epitaxial La-doped SrTiO3 films

D. J.  Keeble; B. Jalan; L. Ravelli; W. Egger; G. Kanda; S. Stemmer

doi:10.1063/1.3664398

Suppression of vacancy defects in epitaxial La-doped SrTiO3 films

D. J. Keeble, B. Jalan, L. Ravelli, W. Egger, G. Kanda, S. Stemmer

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the perfect lattice. This enabled the concentrations of charged cation vacancies to be estimated, and these were found to be at least an order of magnitude below the La-dopant concentrations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664398]

Original language	English
Article number	232905
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3664398
Publication status	Published - 5 Dec 2011

Keywords

POSITRON TRAPPING RATES
SILICON

Access to Document

10.1063/1.3664398

Cite this

@article{2ba776372ec145ae9492e7602d7b022c,

title = "Suppression of vacancy defects in epitaxial La-doped SrTiO3 films",

abstract = "Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the perfect lattice. This enabled the concentrations of charged cation vacancies to be estimated, and these were found to be at least an order of magnitude below the La-dopant concentrations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664398]",

keywords = "POSITRON TRAPPING RATES, SILICON",

author = "Keeble, {D. J.} and B. Jalan and L. Ravelli and W. Egger and G. Kanda and S. Stemmer",

year = "2011",

month = dec,

day = "5",

doi = "10.1063/1.3664398",

language = "English",

volume = "99",

pages = "--",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Suppression of vacancy defects in epitaxial La-doped SrTiO3 films

AU - Keeble, D. J.

AU - Jalan, B.

AU - Ravelli, L.

AU - Egger, W.

AU - Kanda, G.

AU - Stemmer, S.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the perfect lattice. This enabled the concentrations of charged cation vacancies to be estimated, and these were found to be at least an order of magnitude below the La-dopant concentrations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664398]

AB - Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the perfect lattice. This enabled the concentrations of charged cation vacancies to be estimated, and these were found to be at least an order of magnitude below the La-dopant concentrations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664398]

KW - POSITRON TRAPPING RATES

KW - SILICON

U2 - 10.1063/1.3664398

DO - 10.1063/1.3664398

M3 - Article

SN - 0003-6951

VL - 99

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232905

ER -

Suppression of vacancy defects in epitaxial La-doped SrTiO3 films

Abstract

Keywords

Access to Document

Fingerprint

Cite this