Suppression of vacancy defects in epitaxial La-doped SrTiO3 films

D. J. Keeble, B. Jalan, L. Ravelli, W. Egger, G. Kanda, S. Stemmer

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    Abstract

    Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown by molecular beam epitaxy found that the films contained sufficiently low concentrations of Sr vacancies and vacancy cluster defects to allow the observation of positron annihilation events from the perfect lattice. This enabled the concentrations of charged cation vacancies to be estimated, and these were found to be at least an order of magnitude below the La-dopant concentrations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664398]

    Original languageEnglish
    Article number232905
    Pages (from-to)-
    Number of pages3
    JournalApplied Physics Letters
    Volume99
    Issue number23
    DOIs
    Publication statusPublished - 5 Dec 2011

    Keywords

    • POSITRON TRAPPING RATES
    • SILICON

    Cite this

    Keeble, D. J., Jalan, B., Ravelli, L., Egger, W., Kanda, G., & Stemmer, S. (2011). Suppression of vacancy defects in epitaxial La-doped SrTiO3 films. Applied Physics Letters, 99(23), -. [232905]. https://doi.org/10.1063/1.3664398