Surface electronic structure of two- and three-dimensional holmium silicide on Si(111)

Charles Woffinden; Christopher Eames; Hervé Ménard; Steve P. Tear; Andrew Pratt

doi:10.1103/PhysRevB.79.245406

Surface electronic structure of two- and three-dimensional holmium silicide on Si(111)

Charles Woffinden
, Christopher Eames
, Hervé Ménard
, Steve P. Tear
, Andrew Pratt (Lead / Corresponding author)

Centre for Anatomy and Human Identification

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The surface electronic structure of two- and three-dimensional Ho silicides grown on Si(111) has been studied with the techniques of metastable de-excitation spectroscopy (MDS) and ultraviolet photoemission spectroscopy. Electronic structure differences between the two cases are examined, and the extreme sensitivity of MDS to the surface density of states (DOS) allows a direct comparison between deconvolved spectra and ab initio density-functional theory calculations. This comparison shows a good agreement between the DOS calculated for the Si (111) -1×1-Ho structure and MDS data obtained from an almost-complete layer of two-dimensional Ho silicide. The dominant role of the topmost silicon bilayer in determining the surface electronic properties is revealed.

Original language	English
Article number	245406
Number of pages	8
Journal	Physical Review B: Condensed matter and materials physics
Volume	79
Issue number	24
Early online date	5 Jun 2009
DOIs	https://doi.org/10.1103/PhysRevB.79.245406
Publication status	Published - 15 Jun 2009

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{4f1a61b483994b88bebc3b5ad7da8868,

title = "Surface electronic structure of two- and three-dimensional holmium silicide on Si(111)",

abstract = "The surface electronic structure of two- and three-dimensional Ho silicides grown on Si(111) has been studied with the techniques of metastable de-excitation spectroscopy (MDS) and ultraviolet photoemission spectroscopy. Electronic structure differences between the two cases are examined, and the extreme sensitivity of MDS to the surface density of states (DOS) allows a direct comparison between deconvolved spectra and ab initio density-functional theory calculations. This comparison shows a good agreement between the DOS calculated for the Si (111) -1{\texttimes}1-Ho structure and MDS data obtained from an almost-complete layer of two-dimensional Ho silicide. The dominant role of the topmost silicon bilayer in determining the surface electronic properties is revealed.",

author = "Charles Woffinden and Christopher Eames and Herv{\'e} M{\'e}nard and Tear, \{Steve P.\} and Andrew Pratt",

note = "Funding: UK Engineering and Physical Sciences Research Council",

year = "2009",

month = jun,

day = "15",

doi = "10.1103/PhysRevB.79.245406",

language = "English",

volume = "79",

journal = "Physical Review B: Condensed matter and materials physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "24",

}

TY - JOUR

T1 - Surface electronic structure of two- and three-dimensional holmium silicide on Si(111)

AU - Woffinden, Charles

AU - Eames, Christopher

AU - Ménard, Hervé

AU - Tear, Steve P.

AU - Pratt, Andrew

N1 - Funding: UK Engineering and Physical Sciences Research Council

PY - 2009/6/15

Y1 - 2009/6/15

N2 - The surface electronic structure of two- and three-dimensional Ho silicides grown on Si(111) has been studied with the techniques of metastable de-excitation spectroscopy (MDS) and ultraviolet photoemission spectroscopy. Electronic structure differences between the two cases are examined, and the extreme sensitivity of MDS to the surface density of states (DOS) allows a direct comparison between deconvolved spectra and ab initio density-functional theory calculations. This comparison shows a good agreement between the DOS calculated for the Si (111) -1×1-Ho structure and MDS data obtained from an almost-complete layer of two-dimensional Ho silicide. The dominant role of the topmost silicon bilayer in determining the surface electronic properties is revealed.

AB - The surface electronic structure of two- and three-dimensional Ho silicides grown on Si(111) has been studied with the techniques of metastable de-excitation spectroscopy (MDS) and ultraviolet photoemission spectroscopy. Electronic structure differences between the two cases are examined, and the extreme sensitivity of MDS to the surface density of states (DOS) allows a direct comparison between deconvolved spectra and ab initio density-functional theory calculations. This comparison shows a good agreement between the DOS calculated for the Si (111) -1×1-Ho structure and MDS data obtained from an almost-complete layer of two-dimensional Ho silicide. The dominant role of the topmost silicon bilayer in determining the surface electronic properties is revealed.

UR - https://www.scopus.com/pages/publications/67649958226

U2 - 10.1103/PhysRevB.79.245406

DO - 10.1103/PhysRevB.79.245406

M3 - Article

AN - SCOPUS:67649958226

SN - 1098-0121

VL - 79

JO - Physical Review B: Condensed matter and materials physics

JF - Physical Review B: Condensed matter and materials physics

IS - 24

M1 - 245406

ER -

Surface electronic structure of two- and three-dimensional holmium silicide on Si(111)

Abstract

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