Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers

M. A. Cataluna, D. B. Malins, A. Gomez-Iglesias, W. Sibbett, A. Miller, E. U. Rafailov

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]

    Original languageEnglish
    Article number121110
    Pages (from-to)-
    Number of pages3
    JournalApplied Physics Letters
    Volume97
    Issue number12
    DOIs
    Publication statusPublished - 20 Sep 2010

    Keywords

    • AMPLIFIERS
    • EMISSION

    Cite this

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    title = "Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers",
    abstract = "We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]",
    keywords = "AMPLIFIERS, EMISSION",
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    Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers. / Cataluna, M. A. ; Malins, D. B.; Gomez-Iglesias, A.; Sibbett, W.; Miller, A.; Rafailov, E. U. .

    In: Applied Physics Letters, Vol. 97, No. 12, 121110, 20.09.2010, p. -.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers

    AU - Cataluna, M. A.

    AU - Malins, D. B.

    AU - Gomez-Iglesias, A.

    AU - Sibbett, W.

    AU - Miller, A.

    AU - Rafailov, E. U.

    PY - 2010/9/20

    Y1 - 2010/9/20

    N2 - We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]

    AB - We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]

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    JF - Applied Physics Letters

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