Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers

M. A. Cataluna, D. B. Malins, A. Gomez-Iglesias, W. Sibbett, A. Miller, E. U. Rafailov

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    Abstract

    We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]

    Original languageEnglish
    Article number121110
    Pages (from-to)-
    Number of pages3
    JournalApplied Physics Letters
    Volume97
    Issue number12
    DOIs
    Publication statusPublished - 20 Sep 2010

    Keywords

    • AMPLIFIERS
    • EMISSION

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