Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers

M. A.  Cataluna; D. B. Malins; A. Gomez-Iglesias; W. Sibbett; A. Miller; E. U.  Rafailov

doi:10.1063/1.3489104

Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers

M. A. Cataluna, D. B. Malins, A. Gomez-Iglesias, W. Sibbett, A. Miller, E. U. Rafailov

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]

Original language	English
Article number	121110
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	12
DOIs	https://doi.org/10.1063/1.3489104
Publication status	Published - 20 Sept 2010

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AMPLIFIERS
EMISSION

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10.1063/1.3489104

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title = "Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers",

abstract = "We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]",

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T1 - Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers

AU - Cataluna, M. A.

AU - Malins, D. B.

AU - Gomez-Iglesias, A.

AU - Sibbett, W.

AU - Miller, A.

AU - Rafailov, E. U.

PY - 2010/9/20

Y1 - 2010/9/20

N2 - We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]

AB - We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489104]

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DO - 10.1063/1.3489104

M3 - Article

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VL - 97

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Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 mu m and its impact on mode-locked quantum-dot lasers

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