Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots

M. C. Hoffmann, B. S. Monozon, D. Livshits, E. U. Rafailov, D. Turchinovich

    Research output: Contribution to journalArticle

    41 Citations (Scopus)

    Abstract

    We demonstrate an instantaneous all-optical manipulation of optical absorption in InGaAs/GaAs quantum dots (QDs) via an electro-absorption effect induced by the electric field of an incident free-space terahertz signal. A terahertz signal with the full bandwidth of 3 THz was directly encoded onto an optical signal probing the absorption in QDs, resulting in the encoded temporal features as fast as 460 fs. The instantaneous nature of this effect enables femtosecond all-optical switching at very high repetition rates, suggesting applications in terahertz-range wireless communication systems with data rates of at least 0.5 Tbit/s. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515909]

    Original languageEnglish
    Article number231108
    Pages (from-to)-
    Number of pages3
    JournalApplied Physics Letters
    Volume97
    Issue number23
    DOIs
    Publication statusPublished - 6 Dec 2010

    Cite this

    Hoffmann, M. C., Monozon, B. S., Livshits, D., Rafailov, E. U., & Turchinovich, D. (2010). Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots. Applied Physics Letters, 97(23), -. [231108]. https://doi.org/10.1063/1.3515909
    Hoffmann, M. C. ; Monozon, B. S. ; Livshits, D. ; Rafailov, E. U. ; Turchinovich, D. / Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots. In: Applied Physics Letters. 2010 ; Vol. 97, No. 23. pp. -.
    @article{329073935ad142e38257bd1c6ca09222,
    title = "Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots",
    abstract = "We demonstrate an instantaneous all-optical manipulation of optical absorption in InGaAs/GaAs quantum dots (QDs) via an electro-absorption effect induced by the electric field of an incident free-space terahertz signal. A terahertz signal with the full bandwidth of 3 THz was directly encoded onto an optical signal probing the absorption in QDs, resulting in the encoded temporal features as fast as 460 fs. The instantaneous nature of this effect enables femtosecond all-optical switching at very high repetition rates, suggesting applications in terahertz-range wireless communication systems with data rates of at least 0.5 Tbit/s. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515909]",
    author = "Hoffmann, {M. C.} and Monozon, {B. S.} and D. Livshits and Rafailov, {E. U.} and D. Turchinovich",
    year = "2010",
    month = "12",
    day = "6",
    doi = "10.1063/1.3515909",
    language = "English",
    volume = "97",
    pages = "--",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics",
    number = "23",

    }

    Hoffmann, MC, Monozon, BS, Livshits, D, Rafailov, EU & Turchinovich, D 2010, 'Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots', Applied Physics Letters, vol. 97, no. 23, 231108, pp. -. https://doi.org/10.1063/1.3515909

    Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots. / Hoffmann, M. C.; Monozon, B. S.; Livshits, D.; Rafailov, E. U.; Turchinovich, D.

    In: Applied Physics Letters, Vol. 97, No. 23, 231108, 06.12.2010, p. -.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots

    AU - Hoffmann, M. C.

    AU - Monozon, B. S.

    AU - Livshits, D.

    AU - Rafailov, E. U.

    AU - Turchinovich, D.

    PY - 2010/12/6

    Y1 - 2010/12/6

    N2 - We demonstrate an instantaneous all-optical manipulation of optical absorption in InGaAs/GaAs quantum dots (QDs) via an electro-absorption effect induced by the electric field of an incident free-space terahertz signal. A terahertz signal with the full bandwidth of 3 THz was directly encoded onto an optical signal probing the absorption in QDs, resulting in the encoded temporal features as fast as 460 fs. The instantaneous nature of this effect enables femtosecond all-optical switching at very high repetition rates, suggesting applications in terahertz-range wireless communication systems with data rates of at least 0.5 Tbit/s. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515909]

    AB - We demonstrate an instantaneous all-optical manipulation of optical absorption in InGaAs/GaAs quantum dots (QDs) via an electro-absorption effect induced by the electric field of an incident free-space terahertz signal. A terahertz signal with the full bandwidth of 3 THz was directly encoded onto an optical signal probing the absorption in QDs, resulting in the encoded temporal features as fast as 460 fs. The instantaneous nature of this effect enables femtosecond all-optical switching at very high repetition rates, suggesting applications in terahertz-range wireless communication systems with data rates of at least 0.5 Tbit/s. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515909]

    U2 - 10.1063/1.3515909

    DO - 10.1063/1.3515909

    M3 - Article

    VL - 97

    SP - -

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 23

    M1 - 231108

    ER -