Terahertz emission by diffusion of carriers and metal-mask dipole inhibition of radiation

M. E. Barnes, D. McBryde, G. J. Daniell, G. Whitworth, A. L. Chung, A. H. Quarterman, K. G. Wilcox, A. Brewer, H. E. Beere, D. A. Ritchie, V. Apostolopoulos

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Terahertz (THz) radiation can be generated by ultrafast photoexcitation of carriers in a semiconductor partly masked by a gold surface. A simulation of the effect taking into account the diffusion of carriers and the electric field shows that the total net current is approximately zero and cannot account for the THz radiation. Finite element modelling and analytic calculations indicate that the THz emission arises because the metal inhibits the radiation from part of the dipole population, thus creating an asymmetry and therefore a net current. Experimental investigations confirm the simulations and show that metal-mask dipole inhibition can be used to create THz emitters.

Original languageEnglish
Pages (from-to)8898-8906
Number of pages9
JournalOptics Express
Volume20
Issue number8
DOIs
Publication statusPublished - 9 Apr 2012

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