Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

N.S. Daghestani; M.A. Cataluna; G. Berry; G. Ross; M.J. Rose

doi:10.1063/1.3586774

Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

N.S. Daghestani, M.A. Cataluna, G. Berry, G. Ross, M.J. Rose

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.

Original language	English
Article number	181107
Journal	Applied Physics Letters
Volume	98
Issue number	18
DOIs	https://doi.org/10.1063/1.3586774
Publication status	Published - 2 May 2011

Keywords

SPECTROSCOPY
RADIATION

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10.1063/1.3586774

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abstract = "We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. {\textcopyright} 2011 American Institute of Physics.",

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AU - Daghestani, N.S.

AU - Cataluna, M.A.

AU - Berry, G.

AU - Ross, G.

AU - Rose, M.J.

PY - 2011/5/2

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N2 - We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.

AB - We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

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Keywords

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