Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

N.S. Daghestani, M.A. Cataluna, G. Berry, G. Ross, M.J. Rose

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Abstract

We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.
Original languageEnglish
Article number181107
JournalApplied Physics Letters
Volume98
Issue number18
DOIs
Publication statusPublished - 2 May 2011

Keywords

  • SPECTROSCOPY
  • RADIATION

Cite this

Daghestani, N. S., Cataluna, M. A., Berry, G., Ross, G., & Rose, M. J. (2011). Terahertz emission from InAs/GaAs quantum dot based photoconductive devices. Applied Physics Letters, 98(18), [181107]. https://doi.org/10.1063/1.3586774