Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

TY - JOUR

T1 - Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

AU - Daghestani, N.S.

AU - Cataluna, M.A.

AU - Berry, G.

AU - Ross, G.

AU - Rose, M.J.

N1 - Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/5/2

Y1 - 2011/5/2

N2 - We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.

AB - We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of ~0.9× 10-5. The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. © 2011 American Institute of Physics.

KW - SPECTROSCOPY

KW - RADIATION

UR - https://www.scopus.com/pages/publications/79957487192

U2 - 10.1063/1.3586774

DO - 10.1063/1.3586774

M3 - Article

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181107

ER -