The determination of carrier lifetimes and associated mobility magnitudes using photoconductivity recovery dynamics in thin-film amorphous semiconductors

Research output: Contribution to journalArticle

Abstract

The extraction of trap-limited mobility information using photoconductivity relaxation dynamics in thin-film amorphous semiconductors is evaluated. Simulated photoconductivity dynamics suggest that free carrier decay is characterised by a spectrum of recombination lifetimes, where the spectra are sensitive to the underlying distribution of shallow trap densities and the experimental photoconductivity generation conditions employed. Weighted averaging of the spectral lifetimes is found to return trap-limited lifetime estimates which agree to within 5% of the lifetime values expected from free-to-trapped carrier ratios established under steady-state photoconductivity conditions. The averaged spectral lifetimes may consequently be used with mobility-lifetime magnitudes to determine the associated trap-limited mobility. The analysis procedure is evaluated using photoconductivity data obtained from a set of a-Si:H films deposited over a range of substrate temperatures.

Original languageEnglish
Pages (from-to)11-15
Number of pages5
JournalThin Solid Films
Volume675
Early online date19 Feb 2019
DOIs
Publication statusPublished - 1 Apr 2019

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Amorphous semiconductors
amorphous semiconductors
Carrier lifetime
Photoconductivity
carrier lifetime
photoconductivity
recovery
Recovery
Thin films
life (durability)
thin films
traps
Substrates
decay
estimates

Keywords

  • Amorphous
  • Photoconductivity
  • Recombination
  • Semiconductor

Cite this

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abstract = "The extraction of trap-limited mobility information using photoconductivity relaxation dynamics in thin-film amorphous semiconductors is evaluated. Simulated photoconductivity dynamics suggest that free carrier decay is characterised by a spectrum of recombination lifetimes, where the spectra are sensitive to the underlying distribution of shallow trap densities and the experimental photoconductivity generation conditions employed. Weighted averaging of the spectral lifetimes is found to return trap-limited lifetime estimates which agree to within 5{\%} of the lifetime values expected from free-to-trapped carrier ratios established under steady-state photoconductivity conditions. The averaged spectral lifetimes may consequently be used with mobility-lifetime magnitudes to determine the associated trap-limited mobility. The analysis procedure is evaluated using photoconductivity data obtained from a set of a-Si:H films deposited over a range of substrate temperatures.",
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N2 - The extraction of trap-limited mobility information using photoconductivity relaxation dynamics in thin-film amorphous semiconductors is evaluated. Simulated photoconductivity dynamics suggest that free carrier decay is characterised by a spectrum of recombination lifetimes, where the spectra are sensitive to the underlying distribution of shallow trap densities and the experimental photoconductivity generation conditions employed. Weighted averaging of the spectral lifetimes is found to return trap-limited lifetime estimates which agree to within 5% of the lifetime values expected from free-to-trapped carrier ratios established under steady-state photoconductivity conditions. The averaged spectral lifetimes may consequently be used with mobility-lifetime magnitudes to determine the associated trap-limited mobility. The analysis procedure is evaluated using photoconductivity data obtained from a set of a-Si:H films deposited over a range of substrate temperatures.

AB - The extraction of trap-limited mobility information using photoconductivity relaxation dynamics in thin-film amorphous semiconductors is evaluated. Simulated photoconductivity dynamics suggest that free carrier decay is characterised by a spectrum of recombination lifetimes, where the spectra are sensitive to the underlying distribution of shallow trap densities and the experimental photoconductivity generation conditions employed. Weighted averaging of the spectral lifetimes is found to return trap-limited lifetime estimates which agree to within 5% of the lifetime values expected from free-to-trapped carrier ratios established under steady-state photoconductivity conditions. The averaged spectral lifetimes may consequently be used with mobility-lifetime magnitudes to determine the associated trap-limited mobility. The analysis procedure is evaluated using photoconductivity data obtained from a set of a-Si:H films deposited over a range of substrate temperatures.

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